Suchergebnisse für "PMDT290" : 29
Art der Ansicht :
Mindestbestellmenge: 4000
Mindestbestellmenge: 4000
Mindestbestellmenge: 4000
Mindestbestellmenge: 236
Mindestbestellmenge: 323
Mindestbestellmenge: 4000
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PMDT290UCE,115 | NEXPERIA | Trans MOSFET N/P-CH 20V 0.8A/0.55A Automotive 6-Pin SOT-666 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT290UCE,115 | Nexperia | Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT290UCE,115 | Nexperia | Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT290UNE,115 | Nexperia | Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT290UNE,115 | Nexperia | Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R |
auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT290UNE,115 | Nexperia | Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R |
auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT290UNE,115 | NEXPERIA | Trans MOSFET N-CH 20V 0.8A Automotive 6-Pin SOT-666 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT290UNE,115 | Nexperia | Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R |
auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
|
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PMDT290UNE,115 | Nexperia | Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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PMDT290UCE,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 500/-350mA Pulsed drain current: -2.2...3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8/±8V On-state resistance: 610mΩ/1.4Ω Mounting: SMD Gate charge: 0.68/1.14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PMDT290UCE,115 | Nexperia | Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
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PMDT290UCE,115 | Nexperia | Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
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PMDT290UCEH | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 500/-350mA Pulsed drain current: -2.2...3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8/±8V On-state resistance: 610mΩ/1.4Ω Mounting: SMD Gate charge: 0.68/1.14nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PMDT290UCEH | Nexperia | Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
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PMDT290UCEH | NEXPERIA | Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
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PMDT290UCEH | Nexperia | Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
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PMDT290UNE,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.5A Pulsed drain current: 3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8V On-state resistance: 610mΩ Mounting: SMD Gate charge: 0.68nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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PMDT290UNE,115 | Nexperia | Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
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PMDT290UNEH | Nexperia | Trans MOSFET N-CH 20V 0.8A T/R |
Produkt ist nicht verfügbar |
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PMDT290UNEH | NEXPERIA | Trans MOSFET N-CH 20V 0.8A T/R |
Produkt ist nicht verfügbar |
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PMDT290UNEH | Nexperia | Trans MOSFET N-CH 20V 0.8A T/R |
Produkt ist nicht verfügbar |
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PMDT290UNEYL | Nexperia | Trans MOSFET N-CH 20V 0.8A Automotive AEC-Q101 6-Pin SOT-666 T/R |
Produkt ist nicht verfügbar |
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PMDT290UNEYL | NEXPERIA | 20 V, 800 mA dual N-channel Trench MOSFET |
Produkt ist nicht verfügbar |
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PMDT290UCE,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 500/-350mA Pulsed drain current: -2.2...3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8/±8V On-state resistance: 610mΩ/1.4Ω Mounting: SMD Gate charge: 0.68/1.14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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PMDT290UCEH | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA Type of transistor: N/P-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 500/-350mA Pulsed drain current: -2.2...3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8/±8V On-state resistance: 610mΩ/1.4Ω Mounting: SMD Gate charge: 0.68/1.14nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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PMDT290UNE,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A Type of transistor: N-MOSFET x2 Technology: Trench Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.5A Pulsed drain current: 3.2A Power dissipation: 0.5W Case: SOT666 Gate-source voltage: ±8V On-state resistance: 610mΩ Mounting: SMD Gate charge: 0.68nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
PMDT290UCE,115 |
Hersteller: NEXPERIA
Trans MOSFET N/P-CH 20V 0.8A/0.55A Automotive 6-Pin SOT-666 T/R
Trans MOSFET N/P-CH 20V 0.8A/0.55A Automotive 6-Pin SOT-666 T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)PMDT290UCE,115 |
Hersteller: Nexperia
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.25 EUR |
PMDT290UCE,115 |
Hersteller: Nexperia
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.18 EUR |
8000+ | 0.15 EUR |
PMDT290UNE,115 |
Hersteller: Nexperia
Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R
Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.17 EUR |
8000+ | 0.14 EUR |
PMDT290UNE,115 |
Hersteller: Nexperia
Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R
Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R
auf Bestellung 32000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
236+ | 0.66 EUR |
323+ | 0.46 EUR |
727+ | 0.2 EUR |
1000+ | 0.14 EUR |
4000+ | 0.12 EUR |
8000+ | 0.092 EUR |
24000+ | 0.083 EUR |
PMDT290UNE,115 |
Hersteller: Nexperia
Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R
Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R
auf Bestellung 32000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
323+ | 0.48 EUR |
727+ | 0.21 EUR |
1000+ | 0.15 EUR |
4000+ | 0.12 EUR |
8000+ | 0.096 EUR |
24000+ | 0.087 EUR |
PMDT290UNE,115 |
Hersteller: NEXPERIA
Trans MOSFET N-CH 20V 0.8A Automotive 6-Pin SOT-666 T/R
Trans MOSFET N-CH 20V 0.8A Automotive 6-Pin SOT-666 T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)PMDT290UNE,115 |
Hersteller: Nexperia
Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R
Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R
auf Bestellung 8000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.15 EUR |
8000+ | 0.13 EUR |
PMDT290UNE,115 |
Hersteller: Nexperia
Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R
Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)PMDT290UCE,115 |
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMDT290UCE,115 |
Hersteller: Nexperia
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R
Produkt ist nicht verfügbar
PMDT290UCE,115 |
Hersteller: Nexperia
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R
Produkt ist nicht verfügbar
PMDT290UCEH |
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMDT290UCEH |
Hersteller: Nexperia
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R
Produkt ist nicht verfügbar
PMDT290UCEH |
Hersteller: NEXPERIA
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R
Produkt ist nicht verfügbar
PMDT290UCEH |
Hersteller: Nexperia
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R
Trans MOSFET N/P-CH 20V 0.8A/0.55A 6-Pin SOT-666 T/R
Produkt ist nicht verfügbar
PMDT290UNE,115 |
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 610mΩ
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 610mΩ
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PMDT290UNE,115 |
Hersteller: Nexperia
Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R
Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R
Produkt ist nicht verfügbar
PMDT290UNEYL |
Hersteller: Nexperia
Trans MOSFET N-CH 20V 0.8A Automotive AEC-Q101 6-Pin SOT-666 T/R
Trans MOSFET N-CH 20V 0.8A Automotive AEC-Q101 6-Pin SOT-666 T/R
Produkt ist nicht verfügbar
PMDT290UNEYL |
Hersteller: NEXPERIA
20 V, 800 mA dual N-channel Trench MOSFET
20 V, 800 mA dual N-channel Trench MOSFET
Produkt ist nicht verfügbar
PMDT290UCE,115 |
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
PMDT290UCEH |
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; Trench; unipolar; 20/-20V; 500/-350mA
Type of transistor: N/P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 500/-350mA
Pulsed drain current: -2.2...3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8/±8V
On-state resistance: 610mΩ/1.4Ω
Mounting: SMD
Gate charge: 0.68/1.14nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
PMDT290UNE,115 |
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 610mΩ
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 500mA; Idm: 3.2A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 3.2A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±8V
On-state resistance: 610mΩ
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar