Suchergebnisse für "SSM3J358R" : 13
Art der Ansicht :
Mindestbestellmenge: 17
Mindestbestellmenge: 48
Mindestbestellmenge: 3000
Mindestbestellmenge: 24
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| SSM3J358R,LF | Toshiba |
 P-канальний ПТ; Udss, В = 20; Id = 6 А; Ciss, пФ @ Uds, В = 1331 @ 10; Qg, нКл = 38,5 @ 8 В; Rds = 22,1 мОм @ 6 A, 8 В; Ugs(th) = 1 В @ 1 мА; Р, Вт = 1; Тексп, °C = -55...+150; Тип монт. = smd; SOT-23F-3 |
auf Bestellung 2497 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J358R,LF | Toshiba |
MOSFET LowON Res MOSFET ID=-6A VDSS=-20V |
auf Bestellung 311507 Stücke: Lieferzeit 14-28 Tag (e) |
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SSM3J358R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V |
auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM3J358R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 6A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V |
auf Bestellung 30116 Stücke: Lieferzeit 21-28 Tag (e) |
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SSM3J358R,LF(T | Toshiba |
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R |
auf Bestellung 288 Stücke: Lieferzeit 14-21 Tag (e) |
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SSM3J358R,LF Produktcode: 168844 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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| SSM3J358R | Toshiba |
Toshiba |
Produkt ist nicht verfügbar |
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SSM3J358R,LF | Toshiba |
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |
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SSM3J358R,LF | Toshiba |
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |
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SSM3J358R,LF | Toshiba |
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |
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| SSM3J358R,LF | Toshiba |
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |
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SSM3J358R,LF(T | Toshiba |
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R |
Produkt ist nicht verfügbar |
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| SSM3J358RLF(T | Toshiba | Toshiba |
Produkt ist nicht verfügbar |
| SSM3J358R,LF |
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Hersteller: Toshiba
P-канальний ПТ; Udss, В = 20; Id = 6 А; Ciss, пФ @ Uds, В = 1331 @ 10; Qg, нКл = 38,5 @ 8 В; Rds = 22,1 мОм @ 6 A, 8 В; Ugs(th) = 1 В @ 1 мА; Р, Вт = 1; Тексп, °C = -55...+150; Тип монт. = smd; SOT-23F-3
P-канальний ПТ; Udss, В = 20; Id = 6 А; Ciss, пФ @ Uds, В = 1331 @ 10; Qg, нКл = 38,5 @ 8 В; Rds = 22,1 мОм @ 6 A, 8 В; Ugs(th) = 1 В @ 1 мА; Р, Вт = 1; Тексп, °C = -55...+150; Тип монт. = smd; SOT-23F-3
auf Bestellung 2497 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 0.43 EUR |
| 18+ | 0.37 EUR |
| 100+ | 0.32 EUR |
| SSM3J358R,LF |
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Hersteller: Toshiba
MOSFET LowON Res MOSFET ID=-6A VDSS=-20V
MOSFET LowON Res MOSFET ID=-6A VDSS=-20V
auf Bestellung 311507 Stücke:
Lieferzeit 14-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 48+ | 1.09 EUR |
| 68+ | 0.77 EUR |
| 151+ | 0.35 EUR |
| 1000+ | 0.27 EUR |
| 3000+ | 0.23 EUR |
| 9000+ | 0.21 EUR |
| SSM3J358R,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.23 EUR |
| 9000+ | 0.21 EUR |
| SSM3J358R,LF |
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Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V
Description: MOSFET P-CH 20V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 22.1mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38.5 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1331 pF @ 10 V
auf Bestellung 30116 Stücke:
Lieferzeit 21-28 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 24+ | 1.09 EUR |
| 34+ | 0.77 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.27 EUR |
| SSM3J358R,LF(T |
|
Hersteller: Toshiba
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
auf Bestellung 288 Stücke:
Lieferzeit 14-21 Tag (e)| SSM3J358R,LF |
|
Hersteller: Toshiba
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
Produkt ist nicht verfügbar
| SSM3J358R,LF |
|
Hersteller: Toshiba
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
Produkt ist nicht verfügbar
| SSM3J358R,LF |
|
Hersteller: Toshiba
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
Produkt ist nicht verfügbar
| SSM3J358R,LF |
|
Hersteller: Toshiba
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
Produkt ist nicht verfügbar
| SSM3J358R,LF(T |
|
Hersteller: Toshiba
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
Trans MOSFET P-CH Si 20V 6A 3-Pin SOT-23F T/R
Produkt ist nicht verfügbar