Suchergebnisse für "a7630" : 36
Art der Ansicht :
Mindestbestellmenge: 3000
Mindestbestellmenge: 8
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
KA7630 Produktcode: 40593 |
Fairchild |
IC > IC Niederfrequenzverstärker Gehäuse: SIP-10 U Strom, V: 20 P, W: 1,5 Bemerkung: Fixed Multi-output Regulator Робоча температура, °С: 0…+125°C |
auf Bestellung 4 Stück: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
FDMA7630 | onsemi |
Description: MOSFET N-CH 30V 11A 6MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
FDMA7630 | onsemi |
Description: MOSFET N-CH 30V 11A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V |
auf Bestellung 8124 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||
BA7630S | DIP |
auf Bestellung 125 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||
FA7630C | FUJ | 00+ |
auf Bestellung 264 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
FA7630M | FUJ | 00+ SMD20 |
auf Bestellung 260 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
FA7630M-TE1 | FUJITSU | 03+ |
auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
FA7630M-TE1 | FUJITSU | SOP20 |
auf Bestellung 1700 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
FA7630M-TE1 SOP20 | FUJITSU |
auf Bestellung 1700 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||
KA7630 | KA |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||
KA7630 | SAMSUNG | 99+ |
auf Bestellung 461 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
KA7630L1B | SAMSUNG | 2003 |
auf Bestellung 67 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
KA7630L2B | SAMSUNG | 2003 |
auf Bestellung 66 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
KA7630L3B | SAMSUNG | 2003 |
auf Bestellung 69 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
KA7630L4A | SAMSUNG | 2003 |
auf Bestellung 175 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
KIA7630P |
auf Bestellung 52 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
SAA7630 | PHILIPS | DIP |
auf Bestellung 130 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
SAA7630P | PHILIPS | 2 DIP |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
TA7630 | TOSHIBA | 09+ DIP |
auf Bestellung 338 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
TA7630AP |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
TA7630P | TOSHIBA | 97+ |
auf Bestellung 36 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
TA7630P | TOS | 09+ . |
auf Bestellung 338 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
TA7630P | TOSHIBA | 97+; |
auf Bestellung 48 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
TA7630P | TOSHIBA |
auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
|||||||||||||
TA7630P | TOSHIBA | DIP |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
TA7630P | TOSHIBA | 06+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||
TA7630P Produktcode: 83284 |
Toshiba |
IC > IC Niederfrequenzverstärker Gehäuse: DIP-16 U Strom, V: 14 Bemerkung: Dual volume/balance/Tone (BASS/Treble) DC control |
Produkt ist nicht verfügbar
|
||||||||||||
FDMA7630 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 24A; 2.4W; MicroFET Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Pulsed drain current: 24A Power dissipation: 2.4W Case: MicroFET Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
||||||||||||
FDMA7630 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 24A; 2.4W; MicroFET Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 11A Pulsed drain current: 24A Power dissipation: 2.4W Case: MicroFET Gate-source voltage: ±20V On-state resistance: 18mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||
FDMA7630 | ON Semiconductor | Trans MOSFET N-CH 30V 11A 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
||||||||||||
KA7630 | onsemi |
Description: IC REG LINEAR 5.1V/8V/12V 10SIP Packaging: Tube Package / Case: 10-SIP, 10-SIPH Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA, 500mA, 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 2 mA Voltage - Input (Max): 20V Number of Regulators: 3 Supplier Device Package: 10-SIP H/S Voltage - Output (Min/Fixed): 5.1V, 8V, 12V Control Features: Enable, Reset Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, - Protection Features: Over Temperature, Over Voltage, Short Circuit |
Produkt ist nicht verfügbar |
||||||||||||
KA7630TS | onsemi |
Description: IC REG LINEAR 5.1V/8V/12V 10SIP Packaging: Tube Package / Case: 10-SIP, 10-SIPH Output Type: Fixed Mounting Type: Through Hole Current - Output: 500mA, 500mA, 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 2 mA Voltage - Input (Max): 20V Number of Regulators: 3 Supplier Device Package: 10-SIP H/S Voltage - Output (Min/Fixed): 5.1V, 8V, 12V Control Features: Enable, Reset Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, - Protection Features: Over Temperature, Over Voltage, Short Circuit |
Produkt ist nicht verfügbar |
||||||||||||
SMSA7630-061 | Skyworks Solutions Inc. |
Description: RF DIODE SCHOTTKY 75MW 0201 Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Diode Type: Schottky - Single Operating Temperature: -65°C ~ 150°C (TA) Capacitance @ Vr, F: 0.2pF @ 150mV, 1MHz Supplier Device Package: 0201 (0603 Metric) Current - Max: 50 mA Power Dissipation (Max): 75 mW |
Produkt ist nicht verfügbar |
||||||||||||
SMSA7630-061 | Skyworks Solutions Inc. |
Description: RF DIODE SCHOTTKY 75MW 0201 Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Diode Type: Schottky - Single Operating Temperature: -65°C ~ 150°C (TA) Capacitance @ Vr, F: 0.2pF @ 150mV, 1MHz Supplier Device Package: 0201 (0603 Metric) Current - Max: 50 mA Power Dissipation (Max): 75 mW |
Produkt ist nicht verfügbar |
||||||||||||
SFH 4655-U-Z | AMS OSRAM | Infrared Emitter 860nm 450mW/sr Circular Right Angle Automotive 2-Pin MIDLED T/R |
Produkt ist nicht verfügbar |
KA7630 Produktcode: 40593 |
Hersteller: Fairchild
IC > IC Niederfrequenzverstärker
Gehäuse: SIP-10
U Strom, V: 20
P, W: 1,5
Bemerkung: Fixed Multi-output Regulator
Робоча температура, °С: 0…+125°C
IC > IC Niederfrequenzverstärker
Gehäuse: SIP-10
U Strom, V: 20
P, W: 1,5
Bemerkung: Fixed Multi-output Regulator
Робоча температура, °С: 0…+125°C
auf Bestellung 4 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 1.96 EUR |
FDMA7630 |
Hersteller: onsemi
Description: MOSFET N-CH 30V 11A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V
Description: MOSFET N-CH 30V 11A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.44 EUR |
FDMA7630 |
Hersteller: onsemi
Description: MOSFET N-CH 30V 11A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V
Description: MOSFET N-CH 30V 11A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 15 V
auf Bestellung 8124 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.48 EUR |
10+ | 2.85 EUR |
100+ | 2.22 EUR |
500+ | 1.88 EUR |
1000+ | 1.53 EUR |
TA7630P Produktcode: 83284 |
Hersteller: Toshiba
IC > IC Niederfrequenzverstärker
Gehäuse: DIP-16
U Strom, V: 14
Bemerkung: Dual volume/balance/Tone (BASS/Treble) DC control
IC > IC Niederfrequenzverstärker
Gehäuse: DIP-16
U Strom, V: 14
Bemerkung: Dual volume/balance/Tone (BASS/Treble) DC control
Produkt ist nicht verfügbar
FDMA7630 |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
FDMA7630 |
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 11A; Idm: 24A; 2.4W; MicroFET
Type of transistor: N-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 11A
Pulsed drain current: 24A
Power dissipation: 2.4W
Case: MicroFET
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
FDMA7630 |
Hersteller: ON Semiconductor
Trans MOSFET N-CH 30V 11A 6-Pin WDFN EP T/R
Trans MOSFET N-CH 30V 11A 6-Pin WDFN EP T/R
Produkt ist nicht verfügbar
KA7630 |
Hersteller: onsemi
Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 500mA, 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Control Features: Enable, Reset
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Protection Features: Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 500mA, 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Control Features: Enable, Reset
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Protection Features: Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
KA7630TS |
Hersteller: onsemi
Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 500mA, 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Control Features: Enable, Reset
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Protection Features: Over Temperature, Over Voltage, Short Circuit
Description: IC REG LINEAR 5.1V/8V/12V 10SIP
Packaging: Tube
Package / Case: 10-SIP, 10-SIPH
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 500mA, 500mA, 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 2 mA
Voltage - Input (Max): 20V
Number of Regulators: 3
Supplier Device Package: 10-SIP H/S
Voltage - Output (Min/Fixed): 5.1V, 8V, 12V
Control Features: Enable, Reset
Voltage Dropout (Max): 2.5V @ 500mA, 2.5V @ 500mA, -
Protection Features: Over Temperature, Over Voltage, Short Circuit
Produkt ist nicht verfügbar
SMSA7630-061 |
Hersteller: Skyworks Solutions Inc.
Description: RF DIODE SCHOTTKY 75MW 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Vr, F: 0.2pF @ 150mV, 1MHz
Supplier Device Package: 0201 (0603 Metric)
Current - Max: 50 mA
Power Dissipation (Max): 75 mW
Description: RF DIODE SCHOTTKY 75MW 0201
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Vr, F: 0.2pF @ 150mV, 1MHz
Supplier Device Package: 0201 (0603 Metric)
Current - Max: 50 mA
Power Dissipation (Max): 75 mW
Produkt ist nicht verfügbar
SMSA7630-061 |
Hersteller: Skyworks Solutions Inc.
Description: RF DIODE SCHOTTKY 75MW 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Vr, F: 0.2pF @ 150mV, 1MHz
Supplier Device Package: 0201 (0603 Metric)
Current - Max: 50 mA
Power Dissipation (Max): 75 mW
Description: RF DIODE SCHOTTKY 75MW 0201
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Diode Type: Schottky - Single
Operating Temperature: -65°C ~ 150°C (TA)
Capacitance @ Vr, F: 0.2pF @ 150mV, 1MHz
Supplier Device Package: 0201 (0603 Metric)
Current - Max: 50 mA
Power Dissipation (Max): 75 mW
Produkt ist nicht verfügbar
SFH 4655-U-Z |
Hersteller: AMS OSRAM
Infrared Emitter 860nm 450mW/sr Circular Right Angle Automotive 2-Pin MIDLED T/R
Infrared Emitter 860nm 450mW/sr Circular Right Angle Automotive 2-Pin MIDLED T/R
Produkt ist nicht verfügbar