Suchergebnisse für "ds4935" : 34
Art der Ansicht :
Mindestbestellmenge: 52
Mindestbestellmenge: 20
Mindestbestellmenge: 52
Mindestbestellmenge: 22
Mindestbestellmenge: 2500
Mindestbestellmenge: 11
Mindestbestellmenge: 50
Mindestbestellmenge: 20
Mindestbestellmenge: 50
Mindestbestellmenge: 24
Mindestbestellmenge: 12
Foto | Bezeichnung | Hersteller | Beschreibung |
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FDS4935A Produktcode: 40550 |
Fairchild |
Transistoren > Transistoren P-Kanal-Feld Gehäuse: SO-8 Uds,V: 30 Id,A: 7 Rds(on),Om: 0.023 Ciss, pF/Qg, nC: 1233/15 Gebr.: 2P /: SMD |
verfügbar: 88 Stück
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FDS4935A | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2464 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4935A | ON-Semicoductor |
Transistor 2xP-Channel MOSFET; 30V; 20V; 35mOhm; 7A; 2W; -55°C ~ 175°C; FDS4935A TFDS4935a Anzahl je Verpackung: 10 Stücke |
auf Bestellung 20 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS4935A | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2464 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS4935A | onsemi / Fairchild | MOSFET -30V Dual |
auf Bestellung 5045 Stücke: Lieferzeit 14-28 Tag (e) |
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FDS4935A | ON Semiconductor | Trans MOSFET P-CH 30V 7A 8-Pin SOIC T/R |
auf Bestellung 17500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4935A | onsemi |
Description: MOSFET 2P-CH 30V 7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935A | onsemi |
Description: MOSFET 2P-CH 30V 7A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 25791 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935BZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.9A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±25V On-state resistance: 35mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1720 Stücke: Lieferzeit 14-21 Tag (e) |
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FDS4935BZ | Fairchild |
Mosfet Array 2x P-Channel (Dual) 30V 6.9A 900mW Surface Mount 8-SOIC FDS4935BZ ONS TFDS4935bz Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS4935BZ | ONSEMI |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8 Type of transistor: P-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -30V Drain current: -6.9A Power dissipation: 1.6W Case: SO8 Gate-source voltage: ±25V On-state resistance: 35mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1720 Stücke: Lieferzeit 7-14 Tag (e) |
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FDS4935BZ | onsemi / Fairchild | MOSFET 30V PCH DUAL POWER TRENCH M |
auf Bestellung 52459 Stücke: Lieferzeit 14-28 Tag (e) |
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FDS4935BZ | onsemi |
Description: MOSFET 2P-CH 30V 6.9A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 1657 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935 | FAIRCHILD | 07+ SO-8 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935 | FSC | 09+ SO-8 |
auf Bestellung 1090 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935 | FAIRCHILD | 09+ |
auf Bestellung 5018 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935 | FAIRCHILD | SO-8 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935 | FAIRCHILD |
auf Bestellung 139 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935 | FSC |
auf Bestellung 90 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935-NL | FAIRCHILD | 09+ |
auf Bestellung 5018 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935A-NL | FAIRCHILD | SOP8 09+ |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935ANL | FAIRCHILD |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935A_NL | FSC |
auf Bestellung 128000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935B |
auf Bestellung 9080 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935BZ-NL | Fairchild |
auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935BZ_NL | FAIRCHILD |
auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935NL | FAIRCHILD |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935_NL | FAIRCHILD |
auf Bestellung 400000 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS4935 | ON Semiconductor | Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R |
Produkt ist nicht verfügbar |
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FDS4935 | onsemi |
Description: MOSFET 2P-CH 30V 7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7A Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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FDS4935BZ | ON Semiconductor | Trans MOSFET P-CH 30V 6.9A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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FDS4935BZ | onsemi |
Description: MOSFET 2P-CH 30V 6.9A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 900mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.9A Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
Produkt ist nicht verfügbar |
FDS4935A Produktcode: 40550 |
Hersteller: Fairchild
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Uds,V: 30
Id,A: 7
Rds(on),Om: 0.023
Ciss, pF/Qg, nC: 1233/15
Gebr.: 2P
/: SMD
Transistoren > Transistoren P-Kanal-Feld
Gehäuse: SO-8
Uds,V: 30
Id,A: 7
Rds(on),Om: 0.023
Ciss, pF/Qg, nC: 1233/15
Gebr.: 2P
/: SMD
verfügbar: 88 Stück
Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.49 EUR |
10+ | 0.48 EUR |
FDS4935A |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2464 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
52+ | 1.39 EUR |
83+ | 0.87 EUR |
100+ | 0.72 EUR |
105+ | 0.69 EUR |
250+ | 0.65 EUR |
FDS4935A |
Hersteller: ON-Semicoductor
Transistor 2xP-Channel MOSFET; 30V; 20V; 35mOhm; 7A; 2W; -55°C ~ 175°C; FDS4935A TFDS4935a
Anzahl je Verpackung: 10 Stücke
Transistor 2xP-Channel MOSFET; 30V; 20V; 35mOhm; 7A; 2W; -55°C ~ 175°C; FDS4935A TFDS4935a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 2.88 EUR |
FDS4935A |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; 1.6W; SO8
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2464 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
52+ | 1.39 EUR |
83+ | 0.87 EUR |
100+ | 0.72 EUR |
105+ | 0.69 EUR |
250+ | 0.65 EUR |
FDS4935A |
Hersteller: onsemi / Fairchild
MOSFET -30V Dual
MOSFET -30V Dual
auf Bestellung 5045 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 2.42 EUR |
27+ | 1.93 EUR |
100+ | 1.53 EUR |
500+ | 1.3 EUR |
1000+ | 1.06 EUR |
2500+ | 1.03 EUR |
FDS4935A |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 7A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 7A 8-Pin SOIC T/R
auf Bestellung 17500 Stücke:
Lieferzeit 14-21 Tag (e)FDS4935A |
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 25000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.99 EUR |
5000+ | 0.94 EUR |
12500+ | 0.9 EUR |
FDS4935A |
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 30V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 25791 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 2.39 EUR |
14+ | 1.96 EUR |
100+ | 1.52 EUR |
500+ | 1.29 EUR |
1000+ | 1.05 EUR |
FDS4935BZ |
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 1720 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.44 EUR |
83+ | 0.87 EUR |
108+ | 0.67 EUR |
114+ | 0.63 EUR |
FDS4935BZ |
Hersteller: Fairchild
Mosfet Array 2x P-Channel (Dual) 30V 6.9A 900mW Surface Mount 8-SOIC FDS4935BZ ONS TFDS4935bz
Anzahl je Verpackung: 10 Stücke
Mosfet Array 2x P-Channel (Dual) 30V 6.9A 900mW Surface Mount 8-SOIC FDS4935BZ ONS TFDS4935bz
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.73 EUR |
FDS4935BZ |
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -6.9A; 1.6W; SO8
Type of transistor: P-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.9A
Power dissipation: 1.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1720 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 1.44 EUR |
83+ | 0.87 EUR |
108+ | 0.67 EUR |
114+ | 0.63 EUR |
FDS4935BZ |
Hersteller: onsemi / Fairchild
MOSFET 30V PCH DUAL POWER TRENCH M
MOSFET 30V PCH DUAL POWER TRENCH M
auf Bestellung 52459 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 2.2 EUR |
29+ | 1.8 EUR |
100+ | 1.4 EUR |
500+ | 1.19 EUR |
1000+ | 0.97 EUR |
2500+ | 0.94 EUR |
FDS4935BZ |
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 6.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 30V 6.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 1657 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 2.18 EUR |
15+ | 1.79 EUR |
100+ | 1.39 EUR |
500+ | 1.18 EUR |
1000+ | 0.96 EUR |
FDS4935 |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R
Trans MOSFET P-CH 30V 7A 8-Pin SOIC N T/R
Produkt ist nicht verfügbar
FDS4935 |
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET 2P-CH 30V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A
Input Capacitance (Ciss) (Max) @ Vds: 1233pF @ 15V
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
FDS4935BZ |
Hersteller: ON Semiconductor
Trans MOSFET P-CH 30V 6.9A 8-Pin SOIC T/R
Trans MOSFET P-CH 30V 6.9A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
FDS4935BZ |
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 6.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2P-CH 30V 6.9A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.9A
Input Capacitance (Ciss) (Max) @ Vds: 1360pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Produkt ist nicht verfügbar