Suchergebnisse für "f7309" : 37
Art der Ansicht :
Mindestbestellmenge: 20
Mindestbestellmenge: 53
Mindestbestellmenge: 53
Mindestbestellmenge: 26
Mindestbestellmenge: 8
Mindestbestellmenge: 4000
Mindestbestellmenge: 13
Mindestbestellmenge: 4
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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IRF7309PBF Produktcode: 36562 |
IR |
Transistoren > MOSFET N-CH Gehäuse: SO-8 Uds,V: 30 Idd,A: 4.7(3.5) Rds(on), Ohm: 0.05(0.1) Ciss, pF/Qg, nC: 520/25 Bem.: N+P JHGF: SMD |
verfügbar: 534 Stück
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IRF7309TRPBF (Transistoren Feld N-Kanal) Produktcode: 45192 |
IR |
Transistoren > MOSFET N-CH Gehäuse: SO-8 Uds,V: 30 Idd,A: 4 Rds(on), Ohm: 01.05.2000 Ciss, pF/Qg, nC: 520/25 Bem.: P/N Kanal 2 in 1 JHGF: SMD ZCODE: 8541290010 |
verfügbar: 12 Stück
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F7309 | IOR | 01+ SOP |
auf Bestellung 232 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7309 | Infineon |
N/P-MOSFET 4A/-3,5A 30V/-30V 1,4W 0.05Ω IRF7309 TIRF7309 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 45 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7309PBF | IR | Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=-30V; Id=-3,6A; Pdmax=2,0W; Rds=0,10 Ohm |
auf Bestellung 427 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7309TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Kind of package: reel Case: SO8 Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Drain-source voltage: 30/-30V Drain current: 4/-3A On-state resistance: 50/100mΩ Type of transistor: N/P-MOSFET Power dissipation: 1.4W Polarisation: unipolar |
auf Bestellung 562 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7309TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Kind of package: reel Case: SO8 Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Drain-source voltage: 30/-30V Drain current: 4/-3A On-state resistance: 50/100mΩ Type of transistor: N/P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
auf Bestellung 562 Stücke: Lieferzeit 7-14 Tag (e) |
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IRF7309TRPBF | Infineon Technologies | Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7309TRPBF | Infineon Technologies | MOSFET MOSFT DUAL N/PCh 30V 4.0A |
auf Bestellung 3450 Stücke: Lieferzeit 14-28 Tag (e) |
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IRF7309TRPBF | International Rectifier/Infineon | Транзистор польовий N+P; Udss, В = 30; Id = 4 А; Ptot, Вт = 1,4; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 15; Qg, нКл = 25 @ 4,5 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; Id2 = 3 A; SOICN-8 |
auf Bestellung 1270 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7309TRPBF | Infineon Technologies | Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7309TRPBF | Infineon Technologies |
Description: MOSFET N/P-CH 30V 4A/3A 8SO Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7309TRPBF | Infineon Technologies |
Description: MOSFET N/P-CH 30V 4A/3A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
auf Bestellung 25534 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7309QTRPBF | IOR |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7309TRPBF | International Rectifier Corporation | (SO-8) |
auf Bestellung 4630 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF7309TRPBF/IR | IR | 08+; |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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S6040RTP | Littelfuse Inc. |
Description: SCR 600V 40A TO220AB-R Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -40°C ~ 125°C Current - Hold (Ih) (Max): 60 mA Current - Gate Trigger (Igt) (Max): 40 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 430A, 520A Current - On State (It (AV)) (Max): 25 A Voltage - Gate Trigger (Vgt) (Max): 1.5 V Voltage - On State (Vtm) (Max): 1.8 V Current - Off State (Max): 10 µA Supplier Device Package: TO-220AB-R Part Status: Active Current - On State (It (RMS)) (Max): 40 A Voltage - Off State: 600 V |
auf Bestellung 799 Stücke: Lieferzeit 21-28 Tag (e) |
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IRF7309 Produktcode: 19215 |
IR |
Transistoren > MOSFET N-CH Gehäuse: SO-8 Uds,V: 30 Idd,A: 4 Rds(on), Ohm: 01.05.2000 Bem.: N+P (3A) JHGF: SMD |
Produkt ist nicht verfügbar
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AUIRF7309Q | Infineon Technologies | Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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AUIRF7309Q | Infineon Technologies |
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete |
Produkt ist nicht verfügbar |
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AUIRF7309QTR | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Case: SO8 Gate charge: 16.7nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Drain-source voltage: 30/-30V Drain current: 4/-3A On-state resistance: 50/100mΩ Type of transistor: N/P-MOSFET Power dissipation: 1.4W Polarisation: unipolar |
Produkt ist nicht verfügbar |
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AUIRF7309QTR | Infineon Technologies | Trans MOSFET N/P-CH 30V 4A/3A Automotive 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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AUIRF7309QTR | Infineon Technologies | Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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AUIRF7309QTR | Infineon Technologies |
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
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AUIRF7309QTR | Infineon Technologies |
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Last Time Buy |
Produkt ist nicht verfügbar |
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IRF7309 | Infineon Technologies | Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7309HR | IR - ASA only Supplier | Trans MOSFET N/P-CH 30V 4A/3A T/R |
Produkt ist nicht verfügbar |
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IRF7309PBF | Infineon Technologies |
Description: MOSFET N/P-CH 30V 4A/3A 8SO Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO |
Produkt ist nicht verfügbar |
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IRF7309QPBF | Infineon Technologies | Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC |
Produkt ist nicht verfügbar |
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IRF7309QTRPBF | Infineon Technologies | Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC T/R |
Produkt ist nicht verfügbar |
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IRF7309QTRPBF | Infineon Technologies |
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4A, 3A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Part Status: Obsolete |
Produkt ist nicht verfügbar |
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AUIRF7309QTR | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8 Case: SO8 Gate charge: 16.7nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Drain-source voltage: 30/-30V Drain current: 4/-3A On-state resistance: 50/100mΩ Type of transistor: N/P-MOSFET Power dissipation: 1.4W Polarisation: unipolar Anzahl je Verpackung: 4000 Stücke |
Produkt ist nicht verfügbar |
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7309 BECBP SKF | SKF |
Category: Roller Bearings Description: Bearing: single row deep groove ball; angular contact; W: 45mm Type of bearing: single row deep groove ball Version: angular contact Internal diameter: 45mm Outside diameter: 100mm Width: 45mm Rolling element material: bearing steel Cage material: polyamide Race material: bearing steel Kind of Bearing: rolling |
Produkt ist nicht verfügbar |
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7309 BECBP SKF | SKF |
Category: Roller Bearings Description: Bearing: single row deep groove ball; angular contact; W: 45mm Type of bearing: single row deep groove ball Version: angular contact Internal diameter: 45mm Outside diameter: 100mm Width: 45mm Rolling element material: bearing steel Cage material: polyamide Race material: bearing steel Kind of Bearing: rolling Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
IRF7309PBF Produktcode: 36562 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4.7(3.5)
Rds(on), Ohm: 0.05(0.1)
Ciss, pF/Qg, nC: 520/25
Bem.: N+P
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4.7(3.5)
Rds(on), Ohm: 0.05(0.1)
Ciss, pF/Qg, nC: 520/25
Bem.: N+P
JHGF: SMD
verfügbar: 534 Stück
Anzahl | Preis ohne MwSt |
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1+ | 0.57 EUR |
10+ | 0.42 EUR |
IRF7309TRPBF (Transistoren Feld N-Kanal) Produktcode: 45192 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 520/25
Bem.: P/N Kanal 2 in 1
JHGF: SMD
ZCODE: 8541290010
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 520/25
Bem.: P/N Kanal 2 in 1
JHGF: SMD
ZCODE: 8541290010
verfügbar: 12 Stück
Anzahl | Preis ohne MwSt |
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1+ | 0.35 EUR |
IRF7309 |
Hersteller: Infineon
N/P-MOSFET 4A/-3,5A 30V/-30V 1,4W 0.05Ω IRF7309 TIRF7309
Anzahl je Verpackung: 5 Stücke
N/P-MOSFET 4A/-3,5A 30V/-30V 1,4W 0.05Ω IRF7309 TIRF7309
Anzahl je Verpackung: 5 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
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20+ | 1.93 EUR |
IRF7309PBF |
Hersteller: IR
Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=-30V; Id=-3,6A; Pdmax=2,0W; Rds=0,10 Ohm
Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=-30V; Id=-3,6A; Pdmax=2,0W; Rds=0,10 Ohm
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
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1+ | 2.02 EUR |
10+ | 1.79 EUR |
IRF7309TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Kind of package: reel
Case: SO8
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Kind of package: reel
Case: SO8
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
auf Bestellung 562 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 1.36 EUR |
100+ | 0.72 EUR |
123+ | 0.58 EUR |
145+ | 0.49 EUR |
154+ | 0.47 EUR |
500+ | 0.45 EUR |
IRF7309TRPBF |
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Kind of package: reel
Case: SO8
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Kind of package: reel
Case: SO8
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 562 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
53+ | 1.36 EUR |
100+ | 0.72 EUR |
123+ | 0.58 EUR |
145+ | 0.49 EUR |
154+ | 0.47 EUR |
500+ | 0.45 EUR |
IRF7309TRPBF |
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)IRF7309TRPBF |
Hersteller: Infineon Technologies
MOSFET MOSFT DUAL N/PCh 30V 4.0A
MOSFET MOSFT DUAL N/PCh 30V 4.0A
auf Bestellung 3450 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 2.01 EUR |
35+ | 1.5 EUR |
100+ | 1.21 EUR |
500+ | 1.07 EUR |
1000+ | 0.89 EUR |
2000+ | 0.83 EUR |
4000+ | 0.81 EUR |
IRF7309TRPBF |
Hersteller: International Rectifier/Infineon
Транзистор польовий N+P; Udss, В = 30; Id = 4 А; Ptot, Вт = 1,4; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 15; Qg, нКл = 25 @ 4,5 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; Id2 = 3 A; SOICN-8
Транзистор польовий N+P; Udss, В = 30; Id = 4 А; Ptot, Вт = 1,4; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 15; Qg, нКл = 25 @ 4,5 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; Id2 = 3 A; SOICN-8
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 0.94 EUR |
10+ | 0.81 EUR |
100+ | 0.71 EUR |
IRF7309TRPBF |
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)IRF7309TRPBF |
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.83 EUR |
8000+ | 0.79 EUR |
12000+ | 0.75 EUR |
IRF7309TRPBF |
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 25534 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 2.03 EUR |
16+ | 1.64 EUR |
100+ | 1.28 EUR |
500+ | 1.08 EUR |
1000+ | 0.88 EUR |
2000+ | 0.83 EUR |
IRF7309TRPBF |
Hersteller: International Rectifier Corporation
(SO-8)
(SO-8)
auf Bestellung 4630 Stücke:
Lieferzeit 14-21 Tag (e)S6040RTP |
Hersteller: Littelfuse Inc.
Description: SCR 600V 40A TO220AB-R
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 430A, 520A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB-R
Part Status: Active
Current - On State (It (RMS)) (Max): 40 A
Voltage - Off State: 600 V
Description: SCR 600V 40A TO220AB-R
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 430A, 520A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB-R
Part Status: Active
Current - On State (It (RMS)) (Max): 40 A
Voltage - Off State: 600 V
auf Bestellung 799 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.8 EUR |
50+ | 6.17 EUR |
100+ | 5.29 EUR |
500+ | 5.18 EUR |
IRF7309 Produktcode: 19215 |
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Bem.: N+P (3A)
JHGF: SMD
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Bem.: N+P (3A)
JHGF: SMD
Produkt ist nicht verfügbar
AUIRF7309Q |
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AUIRF7309Q |
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
AUIRF7309QTR |
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Case: SO8
Gate charge: 16.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Case: SO8
Gate charge: 16.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Produkt ist nicht verfügbar
AUIRF7309QTR |
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH 30V 4A/3A Automotive 8-Pin SOIC T/R
Trans MOSFET N/P-CH 30V 4A/3A Automotive 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AUIRF7309QTR |
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AUIRF7309QTR |
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
AUIRF7309QTR |
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
IRF7309 |
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
IRF7309HR |
Hersteller: IR - ASA only Supplier
Trans MOSFET N/P-CH 30V 4A/3A T/R
Trans MOSFET N/P-CH 30V 4A/3A T/R
Produkt ist nicht verfügbar
IRF7309PBF |
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
IRF7309QPBF |
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC
Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC
Produkt ist nicht verfügbar
IRF7309QTRPBF |
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC T/R
Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
IRF7309QTRPBF |
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
AUIRF7309QTR |
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Case: SO8
Gate charge: 16.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 4000 Stücke
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Case: SO8
Gate charge: 16.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
7309 BECBP SKF |
Hersteller: SKF
Category: Roller Bearings
Description: Bearing: single row deep groove ball; angular contact; W: 45mm
Type of bearing: single row deep groove ball
Version: angular contact
Internal diameter: 45mm
Outside diameter: 100mm
Width: 45mm
Rolling element material: bearing steel
Cage material: polyamide
Race material: bearing steel
Kind of Bearing: rolling
Category: Roller Bearings
Description: Bearing: single row deep groove ball; angular contact; W: 45mm
Type of bearing: single row deep groove ball
Version: angular contact
Internal diameter: 45mm
Outside diameter: 100mm
Width: 45mm
Rolling element material: bearing steel
Cage material: polyamide
Race material: bearing steel
Kind of Bearing: rolling
Produkt ist nicht verfügbar
7309 BECBP SKF |
Hersteller: SKF
Category: Roller Bearings
Description: Bearing: single row deep groove ball; angular contact; W: 45mm
Type of bearing: single row deep groove ball
Version: angular contact
Internal diameter: 45mm
Outside diameter: 100mm
Width: 45mm
Rolling element material: bearing steel
Cage material: polyamide
Race material: bearing steel
Kind of Bearing: rolling
Anzahl je Verpackung: 1 Stücke
Category: Roller Bearings
Description: Bearing: single row deep groove ball; angular contact; W: 45mm
Type of bearing: single row deep groove ball
Version: angular contact
Internal diameter: 45mm
Outside diameter: 100mm
Width: 45mm
Rolling element material: bearing steel
Cage material: polyamide
Race material: bearing steel
Kind of Bearing: rolling
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar