Suchergebnisse für "f7309" : 37

Art der Ansicht :
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
ohne MwSt
IRF7309PBF IRF7309PBF
Produktcode: 36562
IR irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14 description Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4.7(3.5)
Rds(on), Ohm: 0.05(0.1)
Ciss, pF/Qg, nC: 520/25
Bem.: N+P
JHGF: SMD
verfügbar: 534 Stück
1+0.57 EUR
10+ 0.42 EUR
IRF7309TRPBF (Transistoren Feld N-Kanal) IRF7309TRPBF (Transistoren Feld N-Kanal)
Produktcode: 45192
IR irf7309pbf-1-datasheet.pdf Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 520/25
Bem.: P/N Kanal 2 in 1
JHGF: SMD
ZCODE: 8541290010
verfügbar: 12 Stück
1+0.35 EUR
F7309 IOR 01+ SOP
auf Bestellung 232 Stücke:
Lieferzeit 21-28 Tag (e)
IRF7309 Infineon description N/P-MOSFET 4A/-3,5A 30V/-30V 1,4W 0.05Ω IRF7309 TIRF7309
Anzahl je Verpackung: 5 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.93 EUR
Mindestbestellmenge: 20
IRF7309PBF IR irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14 description Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=-30V; Id=-3,6A; Pdmax=2,0W; Rds=0,10 Ohm
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
1+2.02 EUR
10+ 1.79 EUR
IRF7309TRPBF IRF7309TRPBF INFINEON TECHNOLOGIES irf7309pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Kind of package: reel
Case: SO8
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
auf Bestellung 562 Stücke:
Lieferzeit 14-21 Tag (e)
53+1.36 EUR
100+ 0.72 EUR
123+ 0.58 EUR
145+ 0.49 EUR
154+ 0.47 EUR
500+ 0.45 EUR
Mindestbestellmenge: 53
IRF7309TRPBF IRF7309TRPBF INFINEON TECHNOLOGIES irf7309pbf.pdf description Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Kind of package: reel
Case: SO8
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 562 Stücke:
Lieferzeit 7-14 Tag (e)
53+1.36 EUR
100+ 0.72 EUR
123+ 0.58 EUR
145+ 0.49 EUR
154+ 0.47 EUR
500+ 0.45 EUR
Mindestbestellmenge: 53
IRF7309TRPBF IRF7309TRPBF Infineon Technologies irf7309.pdf description Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
IRF7309TRPBF IRF7309TRPBF Infineon Technologies Infineon_IRF7309_DataSheet_v01_01_EN-3362942.pdf description MOSFET MOSFT DUAL N/PCh 30V 4.0A
auf Bestellung 3450 Stücke:
Lieferzeit 14-28 Tag (e)
26+2.01 EUR
35+ 1.5 EUR
100+ 1.21 EUR
500+ 1.07 EUR
1000+ 0.89 EUR
2000+ 0.83 EUR
4000+ 0.81 EUR
Mindestbestellmenge: 26
IRF7309TRPBF International Rectifier/Infineon irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14 description Транзистор польовий N+P; Udss, В = 30; Id = 4 А; Ptot, Вт = 1,4; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 15; Qg, нКл = 25 @ 4,5 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; Id2 = 3 A; SOICN-8
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
8+0.94 EUR
10+ 0.81 EUR
100+ 0.71 EUR
Mindestbestellmenge: 8
IRF7309TRPBF IRF7309TRPBF Infineon Technologies irf7309.pdf description Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
IRF7309TRPBF IRF7309TRPBF Infineon Technologies irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14 description Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.83 EUR
8000+ 0.79 EUR
12000+ 0.75 EUR
Mindestbestellmenge: 4000
IRF7309TRPBF IRF7309TRPBF Infineon Technologies irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14 description Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 25534 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.03 EUR
16+ 1.64 EUR
100+ 1.28 EUR
500+ 1.08 EUR
1000+ 0.88 EUR
2000+ 0.83 EUR
Mindestbestellmenge: 13
IRF7309QTRPBF IOR IRF7309QPBF.pdf
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
IRF7309TRPBF International Rectifier Corporation irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14 description (SO-8)
auf Bestellung 4630 Stücke:
Lieferzeit 14-21 Tag (e)
IRF7309TRPBF/IR IR 08+;
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
S6040RTP S6040RTP Littelfuse Inc. media?resourcetype=datasheets&itemid=3e6dc21e-4511-421f-834b-b78fdf51f5e3&filename=littelfuse_thyristor_sxx40x_datasheet.pdf Description: SCR 600V 40A TO220AB-R
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 430A, 520A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB-R
Part Status: Active
Current - On State (It (RMS)) (Max): 40 A
Voltage - Off State: 600 V
auf Bestellung 799 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.8 EUR
50+ 6.17 EUR
100+ 5.29 EUR
500+ 5.18 EUR
Mindestbestellmenge: 4
IRF7309 IRF7309
Produktcode: 19215
IR IRF7309.pdf description Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Bem.: N+P (3A)
JHGF: SMD
Produkt ist nicht verfügbar
AUIRF7309Q AUIRF7309Q Infineon Technologies 1295auirf7309q.pdf Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AUIRF7309Q AUIRF7309Q Infineon Technologies auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4 Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
AUIRF7309QTR AUIRF7309QTR INFINEON TECHNOLOGIES auirf7309q.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Case: SO8
Gate charge: 16.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Produkt ist nicht verfügbar
AUIRF7309QTR Infineon Technologies 3677878613750034auirf7309q.pdf Trans MOSFET N/P-CH 30V 4A/3A Automotive 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AUIRF7309QTR AUIRF7309QTR Infineon Technologies 3677878613750034auirf7309q.pdf Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AUIRF7309QTR AUIRF7309QTR Infineon Technologies auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4 Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
AUIRF7309QTR AUIRF7309QTR Infineon Technologies auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4 Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
IRF7309 IRF7309 Infineon Technologies irf7309.pdf description Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
IRF7309HR IR - ASA only Supplier irf7309.pdf Trans MOSFET N/P-CH 30V 4A/3A T/R
Produkt ist nicht verfügbar
IRF7309PBF IRF7309PBF Infineon Technologies irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14 description Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
IRF7309QPBF IRF7309QPBF Infineon Technologies irf7309qpbf.pdf Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC
Produkt ist nicht verfügbar
IRF7309QTRPBF IRF7309QTRPBF Infineon Technologies irf7309qpbf.pdf Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
IRF7309QTRPBF IRF7309QTRPBF Infineon Technologies IRF7309QPBF.pdf Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
AUIRF7309QTR AUIRF7309QTR INFINEON TECHNOLOGIES auirf7309q.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Case: SO8
Gate charge: 16.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
7309 BECBP SKF SKF 7309_BECBP.pdf Category: Roller Bearings
Description: Bearing: single row deep groove ball; angular contact; W: 45mm
Type of bearing: single row deep groove ball
Version: angular contact
Internal diameter: 45mm
Outside diameter: 100mm
Width: 45mm
Rolling element material: bearing steel
Cage material: polyamide
Race material: bearing steel
Kind of Bearing: rolling
Produkt ist nicht verfügbar
7309 BECBP SKF SKF 7309_BECBP.pdf Category: Roller Bearings
Description: Bearing: single row deep groove ball; angular contact; W: 45mm
Type of bearing: single row deep groove ball
Version: angular contact
Internal diameter: 45mm
Outside diameter: 100mm
Width: 45mm
Rolling element material: bearing steel
Cage material: polyamide
Race material: bearing steel
Kind of Bearing: rolling
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRF7309PBF
Produktcode: 36562
description irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14
IRF7309PBF
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4.7(3.5)
Rds(on), Ohm: 0.05(0.1)
Ciss, pF/Qg, nC: 520/25
Bem.: N+P
JHGF: SMD
verfügbar: 534 Stück
Anzahl Preis ohne MwSt
1+0.57 EUR
10+ 0.42 EUR
IRF7309TRPBF (Transistoren Feld N-Kanal)
Produktcode: 45192
irf7309pbf-1-datasheet.pdf
IRF7309TRPBF (Transistoren Feld N-Kanal)
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Ciss, pF/Qg, nC: 520/25
Bem.: P/N Kanal 2 in 1
JHGF: SMD
ZCODE: 8541290010
verfügbar: 12 Stück
Anzahl Preis ohne MwSt
1+0.35 EUR
F7309
Hersteller: IOR
01+ SOP
auf Bestellung 232 Stücke:
Lieferzeit 21-28 Tag (e)
IRF7309 description
Hersteller: Infineon
N/P-MOSFET 4A/-3,5A 30V/-30V 1,4W 0.05Ω IRF7309 TIRF7309
Anzahl je Verpackung: 5 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+1.93 EUR
Mindestbestellmenge: 20
IRF7309PBF description irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14
Hersteller: IR
Транз. Пол. ММ 2N-HEXFET logik SO8 Udss=-30V; Id=-3,6A; Pdmax=2,0W; Rds=0,10 Ohm
auf Bestellung 427 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+2.02 EUR
10+ 1.79 EUR
IRF7309TRPBF description irf7309pbf.pdf
IRF7309TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Kind of package: reel
Case: SO8
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
auf Bestellung 562 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
53+1.36 EUR
100+ 0.72 EUR
123+ 0.58 EUR
145+ 0.49 EUR
154+ 0.47 EUR
500+ 0.45 EUR
Mindestbestellmenge: 53
IRF7309TRPBF description irf7309pbf.pdf
IRF7309TRPBF
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Kind of package: reel
Case: SO8
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
auf Bestellung 562 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
53+1.36 EUR
100+ 0.72 EUR
123+ 0.58 EUR
145+ 0.49 EUR
154+ 0.47 EUR
500+ 0.45 EUR
Mindestbestellmenge: 53
IRF7309TRPBF description irf7309.pdf
IRF7309TRPBF
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
IRF7309TRPBF description Infineon_IRF7309_DataSheet_v01_01_EN-3362942.pdf
IRF7309TRPBF
Hersteller: Infineon Technologies
MOSFET MOSFT DUAL N/PCh 30V 4.0A
auf Bestellung 3450 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.01 EUR
35+ 1.5 EUR
100+ 1.21 EUR
500+ 1.07 EUR
1000+ 0.89 EUR
2000+ 0.83 EUR
4000+ 0.81 EUR
Mindestbestellmenge: 26
IRF7309TRPBF description irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14
Hersteller: International Rectifier/Infineon
Транзистор польовий N+P; Udss, В = 30; Id = 4 А; Ptot, Вт = 1,4; Тип монт. = smd; Ciss, пФ @ Uds, В = 520 @ 15; Qg, нКл = 25 @ 4,5 В; Rds = 50 мОм @ 2,4 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; Id2 = 3 A; SOICN-8
auf Bestellung 1270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
8+0.94 EUR
10+ 0.81 EUR
100+ 0.71 EUR
Mindestbestellmenge: 8
IRF7309TRPBF description irf7309.pdf
IRF7309TRPBF
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
IRF7309TRPBF description irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14
IRF7309TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.83 EUR
8000+ 0.79 EUR
12000+ 0.75 EUR
Mindestbestellmenge: 4000
IRF7309TRPBF description irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14
IRF7309TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
auf Bestellung 25534 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.03 EUR
16+ 1.64 EUR
100+ 1.28 EUR
500+ 1.08 EUR
1000+ 0.88 EUR
2000+ 0.83 EUR
Mindestbestellmenge: 13
IRF7309QTRPBF IRF7309QPBF.pdf
Hersteller: IOR
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
IRF7309TRPBF description irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14
auf Bestellung 4630 Stücke:
Lieferzeit 14-21 Tag (e)
IRF7309TRPBF/IR
Hersteller: IR
08+;
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
S6040RTP media?resourcetype=datasheets&itemid=3e6dc21e-4511-421f-834b-b78fdf51f5e3&filename=littelfuse_thyristor_sxx40x_datasheet.pdf
S6040RTP
Hersteller: Littelfuse Inc.
Description: SCR 600V 40A TO220AB-R
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C
Current - Hold (Ih) (Max): 60 mA
Current - Gate Trigger (Igt) (Max): 40 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 430A, 520A
Current - On State (It (AV)) (Max): 25 A
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Voltage - On State (Vtm) (Max): 1.8 V
Current - Off State (Max): 10 µA
Supplier Device Package: TO-220AB-R
Part Status: Active
Current - On State (It (RMS)) (Max): 40 A
Voltage - Off State: 600 V
auf Bestellung 799 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.8 EUR
50+ 6.17 EUR
100+ 5.29 EUR
500+ 5.18 EUR
Mindestbestellmenge: 4
IRF7309
Produktcode: 19215
description IRF7309.pdf
IRF7309
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: SO-8
Uds,V: 30
Idd,A: 4
Rds(on), Ohm: 01.05.2000
Bem.: N+P (3A)
JHGF: SMD
Produkt ist nicht verfügbar
AUIRF7309Q 1295auirf7309q.pdf
AUIRF7309Q
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AUIRF7309Q auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4
AUIRF7309Q
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
AUIRF7309QTR auirf7309q.pdf
AUIRF7309QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Case: SO8
Gate charge: 16.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Produkt ist nicht verfügbar
AUIRF7309QTR 3677878613750034auirf7309q.pdf
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH 30V 4A/3A Automotive 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AUIRF7309QTR 3677878613750034auirf7309q.pdf
AUIRF7309QTR
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH Si 30V 4A/3A Automotive 8-Pin SOIC T/R
Produkt ist nicht verfügbar
AUIRF7309QTR auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4
AUIRF7309QTR
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
AUIRF7309QTR auirf7309q.pdf?fileId=5546d462533600a4015355ad17f113d4
AUIRF7309QTR
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
Produkt ist nicht verfügbar
IRF7309 description irf7309.pdf
IRF7309
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH 30V 4A/3A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
IRF7309HR irf7309.pdf
Hersteller: IR - ASA only Supplier
Trans MOSFET N/P-CH 30V 4A/3A T/R
Produkt ist nicht verfügbar
IRF7309PBF description irf7309pbf.pdf?fileId=5546d462533600a4015355f224631b14
IRF7309PBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
IRF7309QPBF irf7309qpbf.pdf
IRF7309QPBF
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC
Produkt ist nicht verfügbar
IRF7309QTRPBF irf7309qpbf.pdf
IRF7309QTRPBF
Hersteller: Infineon Technologies
Trans MOSFET N/P-CH Si 30V 4A/3A 8-Pin SOIC T/R
Produkt ist nicht verfügbar
IRF7309QTRPBF IRF7309QPBF.pdf
IRF7309QTRPBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 4A/3A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4A, 3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 2.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
AUIRF7309QTR auirf7309q.pdf
AUIRF7309QTR
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 4/-3A; 1.4W; SO8
Case: SO8
Gate charge: 16.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Drain-source voltage: 30/-30V
Drain current: 4/-3A
On-state resistance: 50/100mΩ
Type of transistor: N/P-MOSFET
Power dissipation: 1.4W
Polarisation: unipolar
Anzahl je Verpackung: 4000 Stücke
Produkt ist nicht verfügbar
7309 BECBP SKF 7309_BECBP.pdf
Hersteller: SKF
Category: Roller Bearings
Description: Bearing: single row deep groove ball; angular contact; W: 45mm
Type of bearing: single row deep groove ball
Version: angular contact
Internal diameter: 45mm
Outside diameter: 100mm
Width: 45mm
Rolling element material: bearing steel
Cage material: polyamide
Race material: bearing steel
Kind of Bearing: rolling
Produkt ist nicht verfügbar
7309 BECBP SKF 7309_BECBP.pdf
Hersteller: SKF
Category: Roller Bearings
Description: Bearing: single row deep groove ball; angular contact; W: 45mm
Type of bearing: single row deep groove ball
Version: angular contact
Internal diameter: 45mm
Outside diameter: 100mm
Width: 45mm
Rolling element material: bearing steel
Cage material: polyamide
Race material: bearing steel
Kind of Bearing: rolling
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar