Hersteller: Siliconix
Transistoren > MOSFET N-CH
Uds,V: 500 V
Idd,A: 5 А
Rds(on), Ohm: 1,4 Ohm
Ciss, pF/Qg, nC: 610/53
JHGF: THT

Hersteller: Osram Digital Lighting System
4052899474741

Hersteller: Samtec Inc.
Description: FCF8 CABLE ASSEMBLY
Packaging: Bag
Connector Type: Plug to Plug
Gender: Male to Male
Color: Blue
Length: 0.250' (76.20mm, 3.000")
Shielding: Shielded
Number of Positions: 30
Cable Type: Flat, Twin Axial
Usage: Internal
Fastening Type: Latch Lock, Push-Pull

Hersteller: Samtec Inc.
Description: FCF8 CABLE ASSEMBLY
Packaging: Bag
Connector Type: Plug to Plug
Gender: Male to Male
Color: Blue
Length: 6.00" (152.4mm)
Shielding: Shielded
Number of Positions: 30
Cable Type: Flat, Twin Axial
Usage: Internal
Fastening Type: Latch Lock, Push-Pull

Hersteller: Samtec
Ribbon Cables / IDC Cables 0.80 mm High-Speed Cost-Effective Micro Coax Cable Assembly

Hersteller: Samtec Inc.
Description: FCF8 CABLE ASSEMBLY
Packaging: Bag
Connector Type: Plug to Plug
Gender: Male to Male
Color: Blue
Length: 1.67' (508.00mm)
Shielding: Shielded
Number of Positions: 30
Cable Type: Flat, Twin Axial
Usage: Internal
Fastening Type: Latch Lock, Push-Pull

Hersteller: Samtec
Ribbon Cables / IDC Cables 0.80 mm High-Speed Cost-Effective Micro Coax Cable Assembly

Hersteller: Samtec Inc.
Description: FCF8 CABLE ASSEMBLY
Packaging: Bag
Connector Type: Plug to Plug
Gender: Male to Male
Color: Blue
Length: 2.50' (762.00mm)
Shielding: Shielded
Number of Positions: 30
Cable Type: Flat, Twin Axial
Usage: Internal
Fastening Type: Latch Lock, Push-Pull

Hersteller: JSMicro Semiconductor
Transistor N-Channel MOSFET; 550V; 30V; 2,6Ohm; 4A; 33W; -55°C ~ 150°C; IRF830 JSMICRO TIRF830 JSM
Anzahl je Verpackung: 25 Stücke

Hersteller: Siliconix
N-MOSFET 4.5A 500V 75W 1.5Ω IRF830 TIRF830
Anzahl je Verpackung: 50 Stücke

Hersteller: Siliconix
N-MOSFET 4.5A 500V 75W 1.5Ω IRF830 TIRF830
Anzahl je Verpackung: 50 Stücke

Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 34A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 32A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 150µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 15 V

Hersteller: Infineon Technologies
Description: IRF8304 - 12V-300V N-CHANNEL POW
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 28A, 10V
Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DirectFET™ Isometric MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V

Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 23A DIRECTFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 140A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 23A, 10V
FET Feature: Schottky Diode (Body)
Power Dissipation (Max): 2.1W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4110 pF @ 15 V

Hersteller: International Rectifier
Description: TRENCH MOSFET - DIRECTFET MV
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.35V @ 100µA
Supplier Device Package: DIRECTFET™ MX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4404 pF @ 15 V

Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced

Hersteller: Vishay Semiconductors
MOSFET N-Chan 500V 5.0 Amp

Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.2A
Pulsed drain current: 20A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced

Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.2A; Idm: 20A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.2A
Pulsed drain current: 20A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Hersteller: Vishay Semiconductors
MOSFET RECOMMENDED ALT IRF830A

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V

Hersteller: Vishay / Siliconix
MOSFET 500V N-CH MOSFET

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V

Hersteller: Vishay Semiconductors
MOSFET 500V N-CH HEXFET D2-PA

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V

Hersteller: Vishay Semiconductors
MOSFET 500V N-CH HEXFET D2-PA

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 3A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V

Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.25A, 10V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1050 pF @ 25 V

Hersteller: Vishay Semiconductors
MOSFET 500V 1.5ohm@10V 5.3A N-Ch D-SRS

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V

Hersteller: Vishay / Siliconix
MOSFET 500V N-CH HEXFET

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 5.3A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 100 V

Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced

Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 2.9A; 74W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 2.9A
Power dissipation: 74W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke

Hersteller: Vishay Semiconductors
MOSFET 500V N-CH HEXFET

Hersteller: Vishay
MOSFET N-MOSFET; unipolar; 500V; 2.9A; 74W; TO220AB

Hersteller: Vishay
Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220-1

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V

Hersteller: Vishay / Siliconix
MOSFET 500V N-CH HEXFET

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 4.5A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V

Hersteller: Vishay
Trans MOSFET N-CH 500V 4.5A 3-Pin(2+Tab) D2PAK

Hersteller: Vishay Semiconductors
MOSFET 500V N-CH HEXFET D2-PA

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 4.5A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V

Hersteller: Vishay Semiconductors
MOSFET N-Chan 500V 4.5 Amp

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 4.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V

Hersteller: Vishay Siliconix
Description: MOSFET N-CH 500V 4.5A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2.7A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 610 pF @ 25 V

Hersteller: CREE LED
LED Uni-Color White 3000K 2-Pin T/R

Hersteller: CreeLED, Inc.
Description: LED J WARM WHT 3000K SMD
Packaging: Tape & Reel (TR)
Package / Case: 1113 (2835 Metric)
Color: White, Warm
Size / Dimension: 0.138" L x 0.110" W (3.50mm x 2.80mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 150mA
Viewing Angle: 120°
Current - Max: 240mA
Supplier Device Package: SMD
Lumens/Watt @ Current - Test: 131 lm/W
Height - Seated (Max): 0.035" (0.90mm)
CCT (K): 3000K
CRI (Color Rendering Index): 90
Flux @ 25°C, Current - Test: 59lm (Typ)
Part Status: Obsolete

Hersteller: CreeLED, Inc.
Description: LED J WARM WHT 3000K SMD
Packaging: Cut Tape (CT)
Package / Case: 1113 (2835 Metric)
Color: White, Warm
Size / Dimension: 0.138" L x 0.110" W (3.50mm x 2.80mm)
Mounting Type: Surface Mount
Voltage - Forward (Vf) (Typ): 3V
Current - Test: 150mA
Viewing Angle: 120°
Current - Max: 240mA
Supplier Device Package: SMD
Lumens/Watt @ Current - Test: 131 lm/W
Height - Seated (Max): 0.035" (0.90mm)
CCT (K): 3000K
CRI (Color Rendering Index): 90
Flux @ 25°C, Current - Test: 59lm (Typ)
Part Status: Obsolete

Hersteller: NXP Semiconductors
Development Boards & Kits - Other Processors MC56F83000-EVK

Hersteller: NXP USA Inc.
Description: MC56F83XXX EVK
Packaging: Bulk
Mounting Type: Fixed
Type: DSP
Contents: Board(s)
Core Processor: 56800EX
Board Type: Evaluation Platform
Utilized IC / Part: MC56F83789
Part Status: Active

Hersteller: Microchip Technology
8-bit Microcontrollers - MCU .875KB 36 RAM 13 I/O

Hersteller: Samtec
Board to Board & Mezzanine Connectors 0.80 mm SEARAY High-Speed High-Density Open-Pin-Field Array Socket

Hersteller: Samtec Inc.
Description: CONN SOCKET HS HD ARRAY
Packaging: Strip
Features: Board Guide
Connector Type: High Density Array, Female
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 180
Pitch: 0.031" (0.80mm)
Height Above Board: 0.180" (4.57mm)
Contact Finish Thickness: 10.0µin (0.25µm)
Mated Stacking Heights: 7mm, 10mm
Number of Rows: 6

Hersteller: Samtec
Board to Board & Mezzanine Connectors 0.80 mm SEARAY High-Speed High-Density Open-Pin-Field Array Socket

Hersteller: Samtec Inc.
Description: CONN HD ARRAY RCPT 0.8MM 4X30POS
Packaging: Cut Tape (CT)
Features: Board Guide
Connector Type: High Density Array, Female
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 120
Pitch: 0.031" (0.80mm)
Height Above Board: 0.180" (4.57mm)
Contact Finish Thickness: 30.0µin (0.76µm)
Mated Stacking Heights: 7mm, 10mm
Number of Rows: 4

Hersteller: Samtec Inc.
Description: CONN HD ARRAY RCPT 0.8MM 6X30POS
Packaging: Cut Tape (CT)
Features: Board Guide
Connector Type: High Density Array, Female
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 180
Pitch: 0.031" (0.80mm)
Height Above Board: 0.180" (4.57mm)
Contact Finish Thickness: 30.0µin (0.76µm)
Mated Stacking Heights: 7mm, 10mm
Part Status: Active
Number of Rows: 6

Hersteller: Samtec
Board to Board & Mezzanine Connectors 0.80 mm SEARAY High-Speed High-Density Open-Pin-Field Array Socket

Hersteller: Samtec Inc.
Description: CONN HD ARRAY RCPT 0.8MM 8X30POS
Packaging: Cut Tape (CT)
Features: Board Guide
Connector Type: High Density Array, Female
Contact Finish: Gold
Mounting Type: Surface Mount
Number of Positions: 240
Pitch: 0.031" (0.80mm)
Height Above Board: 0.180" (4.57mm)
Contact Finish Thickness: 30.0µin (0.76µm)
Mated Stacking Heights: 7mm, 10mm
Part Status: Active
Number of Rows: 8