Suchergebnisse für "n2907" : > 60
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]
Art der Ansicht :
Mindestbestellmenge: 50
Mindestbestellmenge: 50
Mindestbestellmenge: 81
Mindestbestellmenge: 6
Mindestbestellmenge: 10
Mindestbestellmenge: 62
Mindestbestellmenge: 1350
Mindestbestellmenge: 50
Mindestbestellmenge: 62
Mindestbestellmenge: 300
Mindestbestellmenge: 1350
Mindestbestellmenge: 6
Mindestbestellmenge: 23
Mindestbestellmenge: 166
Mindestbestellmenge: 3
Mindestbestellmenge: 39
Mindestbestellmenge: 6
Mindestbestellmenge: 15
Mindestbestellmenge: 15
Mindestbestellmenge: 10
Mindestbestellmenge: 5
Mindestbestellmenge: 6
Mindestbestellmenge: 6
Mindestbestellmenge: 4
Mindestbestellmenge: 2
Mindestbestellmenge: 8
Mindestbestellmenge: 4
Mindestbestellmenge: 4
Mindestbestellmenge: 8
Mindestbestellmenge: 4
Mindestbestellmenge: 2
Mindestbestellmenge: 5
Mindestbestellmenge: 3
Mindestbestellmenge: 6662
Mindestbestellmenge: 54
Mindestbestellmenge: 28
Mindestbestellmenge: 64
Mindestbestellmenge: 32
Mindestbestellmenge: 57
Mindestbestellmenge: 2000
Mindestbestellmenge: 29
Mindestbestellmenge: 57
Mindestbestellmenge: 29
Mindestbestellmenge: 2000
Mindestbestellmenge: 57
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
2N2907 Produktcode: 161911 |
CDIL |
Transistoren > Bipolar-Transistoren PNP Gehäuse: TO-18 fT: 200 MHz U, V: 40 V U, V: 60 V I, А: 0,6 A h21,max: 300 |
auf Bestellung 35 Stück: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
2N2907A-CDI Produktcode: 171514 |
Transistoren > Bipolar-Transistoren PNP |
auf Bestellung 978 Stück: Lieferzeit 21-28 Tag (e) |
|||||||||||||||||||
2N2907 | CDIL |
PNP 600mA 60V 400mW 200MHz 2N2907-CDI 2N2907 T2N2907 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 70 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
2N2907 | CDIL |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.4/1.8W Case: TO18 Current gain: 100...300 Mounting: THT Kind of package: bulk Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
2N2907 | CDIL |
PNP 600mA 60V 400mW 200MHz 2N2907-CDI 2N2907 T2N2907 Anzahl je Verpackung: 50 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
2N2907 | Motorola |
Description: TRANS PNP 40V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1.8 W |
auf Bestellung 29360 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
2N2907 | Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 466 Stücke: Lieferzeit 168-182 Tag (e) |
|
|||||||||||||||||
2N2907 PBFREE | Central Semiconductor | Bipolar Transistors - BJT PNP Silicon |
auf Bestellung 2428 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
2N2907A | CDIL |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.4/1.8W Case: TO18 Current gain: 50...300 Mounting: THT Kind of package: bulk Frequency: 200MHz |
auf Bestellung 10081 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
+1 |
2N2907A | DIOTEC SEMICONDUCTOR |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 625mW; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 300 Mounting: THT Kind of package: Ammo Pack |
auf Bestellung 5175 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
2N2907A | CDIL |
PNP 600mA 60V 400mW 200MHz 2N2907A T2N2907a Anzahl je Verpackung: 50 Stücke |
auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
2N2907A | CDIL |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.4/1.8W Case: TO18 Current gain: 50...300 Mounting: THT Kind of package: bulk Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 10081 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
2N2907A | DIOTEC |
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 2N2907A DIOTEC T2N2907a DIOTEC Anzahl je Verpackung: 100 Stücke |
auf Bestellung 299 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
+1 |
2N2907A | DIOTEC SEMICONDUCTOR |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 625mW; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 300 Mounting: THT Kind of package: Ammo Pack Anzahl je Verpackung: 25 Stücke |
auf Bestellung 5175 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
2N2907A | Diotec Semiconductor | Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo |
auf Bestellung 2934 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
2N2907A | Microchip Technology | Trans GP BJT PNP 60V 0.6A 500mW 3-Pin TO-18 Bag |
auf Bestellung 136 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
2N2907A | Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 630 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
2N2907A | Rectron | Bipolar Transistors - BJT TO-18 |
auf Bestellung 13353 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
2N2907A | Diotec Semiconductor | Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo |
auf Bestellung 4300 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
2N2907A | Diotec Semiconductor | Bipolar Transistors - BJT BJT, TO-92, 60V, 600mA, PNP |
auf Bestellung 7378 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
2N2907A | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
auf Bestellung 78 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
2N2907A | Lumimax Optoelectronic Technology |
Description: TRANS PNP EBC -0.6A 60V TO-92 Packaging: Bulk |
auf Bestellung 2700 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
2N2907A | Good-Ark Semiconductor |
Description: TRANSISTOR, PNP, -60V, -0.60A, T Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW |
auf Bestellung 1582 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
2N2907A PBFREE | Central Semiconductor |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4W; TO18 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.4W Case: TO18 Current gain: 30...300 Mounting: THT Kind of package: bulk Frequency: 200MHz |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
2N2907A PBFREE | Central Semiconductor |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4W; TO18 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.6A Power dissipation: 0.4W Case: TO18 Current gain: 30...300 Mounting: THT Kind of package: bulk Frequency: 200MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||||||
2N2907A PBFREE | Central Semiconductor | Bipolar Transistors - BJT PNP Gen Pur SS |
auf Bestellung 3970 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
2N2907A PBFREE | Central Semiconductor Corp |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-18 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 400 mW |
auf Bestellung 3289 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
2N2907AE3 | Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 220 Stücke: Lieferzeit 168-182 Tag (e) |
|
|||||||||||||||||
2N2907AE4 | Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 95 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
2N2907AUA | Optek / TT Electronics | Bipolar Transistors - BJT PNP G.P. Transistor 4 Pin |
auf Bestellung 166 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
2N2907AUB | Microchip Technology | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 2608 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
2N2907AUB | Optek / TT Electronics | Bipolar Transistors - BJT PNP G.P. Transistor 3 Pin |
auf Bestellung 551 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
2N2907AUB | TT Electronics/Optek Technology |
Description: TRANS PNP 60V 0.6A SMD Packaging: Bulk Package / Case: 3-LCC Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V Supplier Device Package: Ceramic SMD Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 300 mW |
auf Bestellung 437 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
2N2907AUB | Microchip Technology |
Description: TRANS PNP 60V 0.6A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
auf Bestellung 2633 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
2N2907AUB1 | STMicroelectronics |
Description: RAD-HARD 60 V, 0.6 A PNP TRANSIS Packaging: Tray Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1.8 W |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
2N2907AUB1 | STMicroelectronics | Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model |
auf Bestellung 21 Stücke: Lieferzeit 378-392 Tag (e) |
|
|||||||||||||||||
CP591X-2N2907A-CT20 | Central Semiconductor Corp |
Description: TRANS PNP 60V 0.6A DIE 1=20PCS Packaging: Tray Package / Case: Die Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: Die Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V |
auf Bestellung 4 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
JAN2N2907A | Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 8148 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
JAN2N2907A | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Qualification: MIL-PRF-19500/291 |
auf Bestellung 335 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
JAN2N2907AUB | Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 149 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
JANS2N2907A | Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 28 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
JANSR2N2907AUB | Microchip / Microsemi | Bipolar Transistors - BJT RH Small-Signal BJT |
auf Bestellung 40 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
JANTX2N2907A | Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 1903 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
JANTX2N2907AUB | Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 1483 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
JANTX2N2907AUB | Microchip Technology |
Description: TRANS PNP 60V 0.6A UB Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/291 |
auf Bestellung 434 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
JANTX2N2907AUB/TR | Microchip Technology | Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB T/R |
auf Bestellung 115 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
JANTXV2N2907A | Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 1164 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
JANTXV2N2907AUB | Microchip / Microsemi | Bipolar Transistors - BJT Small-Signal BJT |
auf Bestellung 487 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
P2N2907AZL1 | onsemi |
Description: TRANS PNP 60V 0.6A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
PN2907A PBFREE | Central Semiconductor | Bipolar Transistors - BJT PNP Gen Pur SW |
auf Bestellung 13121 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
PN2907A PBFREE | Central Semiconductor Corp |
Description: TRANS PNP 60V 0.6A TO-92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 5575 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
PN2907ABU | onsemi / Fairchild | Bipolar Transistors - BJT PNP Transistor General Purpose |
auf Bestellung 143517 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
PN2907ABU | onsemi |
Description: TRANS PNP 60V 0.8A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 12298 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
PN2907ATA | onsemi / Fairchild | Bipolar Transistors - BJT PNP Transistor General Purpose |
auf Bestellung 13188 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
PN2907ATA | onsemi |
Description: TRANS PNP 60V 0.8A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
PN2907ATA | onsemi |
Description: TRANS PNP 60V 0.8A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 1538 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
PN2907ATAR | onsemi / Fairchild | Bipolar Transistors - BJT PNP Transistor General Purpose |
auf Bestellung 10745 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||||||
PN2907ATAR | onsemi |
Description: TRANS PNP 60V 0.8A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 8843 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
PN2907ATAR | onsemi |
Description: TRANS PNP 60V 0.8A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
PN2907ATF | onsemi / Fairchild | Bipolar Transistors - BJT PNP Transistor General Purpose |
auf Bestellung 27173 Stücke: Lieferzeit 14-28 Tag (e) |
|
2N2907 Produktcode: 161911 |
Hersteller: CDIL
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-18
fT: 200 MHz
U, V: 40 V
U, V: 60 V
I, А: 0,6 A
h21,max: 300
Transistoren > Bipolar-Transistoren PNP
Gehäuse: TO-18
fT: 200 MHz
U, V: 40 V
U, V: 60 V
I, А: 0,6 A
h21,max: 300
auf Bestellung 35 Stück:
Lieferzeit 21-28 Tag (e)2N2907 |
auf Bestellung 70 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.96 EUR |
2N2907 |
Hersteller: CDIL
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4/1.8W
Case: TO18
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4/1.8W
Case: TO18
Current gain: 100...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
2N2907 |
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.96 EUR |
2N2907 |
Hersteller: Motorola
Description: TRANS PNP 40V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
Description: TRANS PNP 40V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1.8 W
auf Bestellung 29360 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
81+ | 8.93 EUR |
2N2907 |
Hersteller: Microchip Technology
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 466 Stücke:
Lieferzeit 168-182 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 8.81 EUR |
100+ | 8.14 EUR |
2N2907 PBFREE |
Hersteller: Central Semiconductor
Bipolar Transistors - BJT PNP Silicon
Bipolar Transistors - BJT PNP Silicon
auf Bestellung 2428 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 5.69 EUR |
12+ | 4.71 EUR |
100+ | 3.74 EUR |
250+ | 3.46 EUR |
500+ | 3.15 EUR |
1000+ | 2.68 EUR |
2000+ | 2.63 EUR |
2N2907A |
Hersteller: CDIL
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4/1.8W
Case: TO18
Current gain: 50...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4/1.8W
Case: TO18
Current gain: 50...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
auf Bestellung 10081 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
62+ | 1.16 EUR |
99+ | 0.72 EUR |
166+ | 0.43 EUR |
223+ | 0.32 EUR |
235+ | 0.3 EUR |
2N2907A |
Hersteller: DIOTEC SEMICONDUCTOR
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 625mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 300
Mounting: THT
Kind of package: Ammo Pack
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 625mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 300
Mounting: THT
Kind of package: Ammo Pack
auf Bestellung 5175 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1350+ | 0.054 EUR |
2125+ | 0.034 EUR |
2675+ | 0.027 EUR |
3525+ | 0.02 EUR |
3725+ | 0.019 EUR |
2N2907A |
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
50+ | 0.94 EUR |
2N2907A |
Hersteller: CDIL
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4/1.8W
Case: TO18
Current gain: 50...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4/1.8W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4/1.8W
Case: TO18
Current gain: 50...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 10081 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
62+ | 1.16 EUR |
99+ | 0.72 EUR |
166+ | 0.43 EUR |
223+ | 0.32 EUR |
235+ | 0.3 EUR |
2N2907A |
Hersteller: DIOTEC
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 2N2907A DIOTEC T2N2907a DIOTEC
Anzahl je Verpackung: 100 Stücke
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 2N2907A DIOTEC T2N2907a DIOTEC
Anzahl je Verpackung: 100 Stücke
auf Bestellung 299 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
300+ | 0.1 EUR |
2N2907A |
Hersteller: DIOTEC SEMICONDUCTOR
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 625mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 300
Mounting: THT
Kind of package: Ammo Pack
Anzahl je Verpackung: 25 Stücke
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 625mW; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 300
Mounting: THT
Kind of package: Ammo Pack
Anzahl je Verpackung: 25 Stücke
auf Bestellung 5175 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1350+ | 0.054 EUR |
2125+ | 0.034 EUR |
2675+ | 0.027 EUR |
3525+ | 0.02 EUR |
3725+ | 0.019 EUR |
2N2907A |
Hersteller: Diotec Semiconductor
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo
auf Bestellung 2934 Stücke:
Lieferzeit 14-21 Tag (e)2N2907A |
Hersteller: Microchip Technology
Trans GP BJT PNP 60V 0.6A 500mW 3-Pin TO-18 Bag
Trans GP BJT PNP 60V 0.6A 500mW 3-Pin TO-18 Bag
auf Bestellung 136 Stücke:
Lieferzeit 14-21 Tag (e)2N2907A |
Hersteller: Microchip Technology
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 630 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 8.81 EUR |
100+ | 8.14 EUR |
2N2907A |
Hersteller: Rectron
Bipolar Transistors - BJT TO-18
Bipolar Transistors - BJT TO-18
auf Bestellung 13353 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 2.33 EUR |
28+ | 1.92 EUR |
100+ | 1.49 EUR |
500+ | 1.26 EUR |
1000+ | 1.03 EUR |
2500+ | 1.01 EUR |
2N2907A |
Hersteller: Diotec Semiconductor
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo
Trans GP BJT PNP 60V 0.6A 625mW 3-Pin TO-92 Ammo
auf Bestellung 4300 Stücke:
Lieferzeit 14-21 Tag (e)2N2907A |
Hersteller: Diotec Semiconductor
Bipolar Transistors - BJT BJT, TO-92, 60V, 600mA, PNP
Bipolar Transistors - BJT BJT, TO-92, 60V, 600mA, PNP
auf Bestellung 7378 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
166+ | 0.31 EUR |
230+ | 0.23 EUR |
274+ | 0.19 EUR |
500+ | 0.15 EUR |
1000+ | 0.13 EUR |
4000+ | 0.099 EUR |
8000+ | 0.065 EUR |
2N2907A |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
auf Bestellung 78 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.74 EUR |
2N2907A |
Hersteller: Lumimax Optoelectronic Technology
Description: TRANS PNP EBC -0.6A 60V TO-92
Packaging: Bulk
Description: TRANS PNP EBC -0.6A 60V TO-92
Packaging: Bulk
auf Bestellung 2700 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
39+ | 0.67 EUR |
50+ | 0.58 EUR |
100+ | 0.48 EUR |
200+ | 0.41 EUR |
500+ | 0.36 EUR |
1000+ | 0.3 EUR |
2000+ | 0.21 EUR |
2N2907A |
Hersteller: Good-Ark Semiconductor
Description: TRANSISTOR, PNP, -60V, -0.60A, T
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Description: TRANSISTOR, PNP, -60V, -0.60A, T
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
auf Bestellung 1582 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.65 EUR |
10+ | 3.86 EUR |
100+ | 3.07 EUR |
500+ | 2.6 EUR |
1000+ | 2.21 EUR |
2N2907A PBFREE |
Hersteller: Central Semiconductor
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4W
Case: TO18
Current gain: 30...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4W
Case: TO18
Current gain: 30...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.76 EUR |
2N2907A PBFREE |
Hersteller: Central Semiconductor
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4W
Case: TO18
Current gain: 30...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.6A; 0.4W; TO18
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.6A
Power dissipation: 0.4W
Case: TO18
Current gain: 30...300
Mounting: THT
Kind of package: bulk
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 4.76 EUR |
23+ | 3.1 EUR |
2N2907A PBFREE |
Hersteller: Central Semiconductor
Bipolar Transistors - BJT PNP Gen Pur SS
Bipolar Transistors - BJT PNP Gen Pur SS
auf Bestellung 3970 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 5.54 EUR |
12+ | 4.71 EUR |
100+ | 3.77 EUR |
250+ | 3.74 EUR |
500+ | 3.2 EUR |
1000+ | 2.89 EUR |
2000+ | 2.49 EUR |
2N2907A PBFREE |
Hersteller: Central Semiconductor Corp
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 400 mW
auf Bestellung 3289 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.67 EUR |
10+ | 4.71 EUR |
100+ | 3.74 EUR |
500+ | 3.17 EUR |
1000+ | 2.69 EUR |
2000+ | 2.55 EUR |
2N2907AE3 |
Hersteller: Microchip Technology
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 220 Stücke:
Lieferzeit 168-182 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 10.17 EUR |
25+ | 10.14 EUR |
100+ | 9.2 EUR |
2N2907AE4 |
Hersteller: Microchip Technology
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 95 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 9.8 EUR |
100+ | 9.1 EUR |
2N2907AUA |
Hersteller: Optek / TT Electronics
Bipolar Transistors - BJT PNP G.P. Transistor 4 Pin
Bipolar Transistors - BJT PNP G.P. Transistor 4 Pin
auf Bestellung 166 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 68.17 EUR |
120+ | 68.07 EUR |
270+ | 63.65 EUR |
2N2907AUB |
Hersteller: Microchip Technology
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 2608 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 15.05 EUR |
100+ | 13.99 EUR |
2N2907AUB |
Hersteller: Optek / TT Electronics
Bipolar Transistors - BJT PNP G.P. Transistor 3 Pin
Bipolar Transistors - BJT PNP G.P. Transistor 3 Pin
auf Bestellung 551 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 62.79 EUR |
270+ | 60.37 EUR |
1020+ | 59.18 EUR |
2N2907AUB |
Hersteller: TT Electronics/Optek Technology
Description: TRANS PNP 60V 0.6A SMD
Packaging: Bulk
Package / Case: 3-LCC
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: Ceramic SMD
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Description: TRANS PNP 60V 0.6A SMD
Packaging: Bulk
Package / Case: 3-LCC
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 10V
Supplier Device Package: Ceramic SMD
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
auf Bestellung 437 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 59.9 EUR |
100+ | 55.3 EUR |
250+ | 53.14 EUR |
2N2907AUB |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
auf Bestellung 2633 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.95 EUR |
100+ | 13.9 EUR |
2N2907AUB1 |
Hersteller: STMicroelectronics
Description: RAD-HARD 60 V, 0.6 A PNP TRANSIS
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
Description: RAD-HARD 60 V, 0.6 A PNP TRANSIS
Packaging: Tray
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.8 W
auf Bestellung 100 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 270.66 EUR |
10+ | 257.86 EUR |
25+ | 252.38 EUR |
80+ | 239.58 EUR |
2N2907AUB1 |
Hersteller: STMicroelectronics
Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
Bipolar Transistors - BJT Rad-Hard 60 V, 0.6 A PNP transistor - Engineering model
auf Bestellung 21 Stücke:
Lieferzeit 378-392 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 286.39 EUR |
10+ | 270.56 EUR |
25+ | 260.81 EUR |
50+ | 253.6 EUR |
100+ | 249.34 EUR |
250+ | 247.08 EUR |
500+ | 246.97 EUR |
CP591X-2N2907A-CT20 |
Hersteller: Central Semiconductor Corp
Description: TRANS PNP 60V 0.6A DIE 1=20PCS
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: Die
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Description: TRANS PNP 60V 0.6A DIE 1=20PCS
Packaging: Tray
Package / Case: Die
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: Die
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 344.32 EUR |
JAN2N2907A |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 8148 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 6.58 EUR |
10+ | 6.55 EUR |
100+ | 6.11 EUR |
250+ | 6.08 EUR |
JAN2N2907A |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
auf Bestellung 335 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.53 EUR |
100+ | 6.07 EUR |
JAN2N2907AUB |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 149 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 14.38 EUR |
100+ | 13.36 EUR |
JANS2N2907A |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 28 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 165.57 EUR |
100+ | 153.76 EUR |
JANSR2N2907AUB |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT RH Small-Signal BJT
Bipolar Transistors - BJT RH Small-Signal BJT
auf Bestellung 40 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 144.12 EUR |
100+ | 133.82 EUR |
JANTX2N2907A |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 1903 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 7.1 EUR |
100+ | 6.63 EUR |
JANTX2N2907AUB |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 1483 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 14.79 EUR |
25+ | 14.77 EUR |
100+ | 13.94 EUR |
JANTX2N2907AUB |
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
auf Bestellung 434 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.9 EUR |
100+ | 13.83 EUR |
JANTX2N2907AUB/TR |
Hersteller: Microchip Technology
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB T/R
Trans GP BJT PNP 60V 0.6A 500mW 4-Pin Case UB T/R
auf Bestellung 115 Stücke:
Lieferzeit 14-21 Tag (e)JANTXV2N2907A |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 1164 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 10.87 EUR |
100+ | 10.11 EUR |
JANTXV2N2907AUB |
Hersteller: Microchip / Microsemi
Bipolar Transistors - BJT Small-Signal BJT
Bipolar Transistors - BJT Small-Signal BJT
auf Bestellung 487 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 18.41 EUR |
100+ | 17.11 EUR |
P2N2907AZL1 |
Hersteller: onsemi
Description: TRANS PNP 60V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92 (TO-226)
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6662+ | 0.12 EUR |
PN2907A PBFREE |
Hersteller: Central Semiconductor
Bipolar Transistors - BJT PNP Gen Pur SW
Bipolar Transistors - BJT PNP Gen Pur SW
auf Bestellung 13121 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
54+ | 0.97 EUR |
75+ | 0.69 EUR |
151+ | 0.35 EUR |
1000+ | 0.32 EUR |
2500+ | 0.21 EUR |
10000+ | 0.2 EUR |
25000+ | 0.17 EUR |
PN2907A PBFREE |
Hersteller: Central Semiconductor Corp
Description: TRANS PNP 60V 0.6A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.6A TO-92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 5575 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.96 EUR |
38+ | 0.69 EUR |
100+ | 0.35 EUR |
2500+ | 0.21 EUR |
PN2907ABU |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT PNP Transistor General Purpose
Bipolar Transistors - BJT PNP Transistor General Purpose
auf Bestellung 143517 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
64+ | 0.82 EUR |
90+ | 0.58 EUR |
203+ | 0.26 EUR |
1000+ | 0.17 EUR |
2500+ | 0.15 EUR |
10000+ | 0.12 EUR |
PN2907ABU |
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 12298 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.83 EUR |
46+ | 0.58 EUR |
100+ | 0.29 EUR |
500+ | 0.24 EUR |
1000+ | 0.18 EUR |
2000+ | 0.15 EUR |
5000+ | 0.14 EUR |
10000+ | 0.12 EUR |
PN2907ATA |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT PNP Transistor General Purpose
Bipolar Transistors - BJT PNP Transistor General Purpose
auf Bestellung 13188 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
57+ | 0.92 EUR |
82+ | 0.63 EUR |
200+ | 0.26 EUR |
1000+ | 0.18 EUR |
2000+ | 0.12 EUR |
24000+ | 0.11 EUR |
PN2907ATA |
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.15 EUR |
6000+ | 0.14 EUR |
10000+ | 0.12 EUR |
PN2907ATA |
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 1538 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.91 EUR |
42+ | 0.63 EUR |
100+ | 0.31 EUR |
500+ | 0.26 EUR |
1000+ | 0.18 EUR |
PN2907ATAR |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT PNP Transistor General Purpose
Bipolar Transistors - BJT PNP Transistor General Purpose
auf Bestellung 10745 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
57+ | 0.92 EUR |
82+ | 0.63 EUR |
200+ | 0.26 EUR |
1000+ | 0.18 EUR |
2000+ | 0.14 EUR |
10000+ | 0.12 EUR |
24000+ | 0.11 EUR |
PN2907ATAR |
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 8843 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.91 EUR |
42+ | 0.63 EUR |
100+ | 0.31 EUR |
500+ | 0.26 EUR |
1000+ | 0.18 EUR |
PN2907ATAR |
Hersteller: onsemi
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.8A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.11 EUR |
6000+ | 0.1 EUR |
10000+ | 0.086 EUR |
PN2907ATF |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT PNP Transistor General Purpose
Bipolar Transistors - BJT PNP Transistor General Purpose
auf Bestellung 27173 Stücke:
Lieferzeit 14-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
57+ | 0.92 EUR |
82+ | 0.63 EUR |
200+ | 0.26 EUR |
1000+ | 0.18 EUR |
2000+ | 0.12 EUR |
24000+ | 0.1 EUR |
Wählen Sie Seite:
1
2
[ Nächste Seite >> ]