Suchergebnisse für "rf740" : > 60

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IRF740PBF IRF740PBF
Produktcode: 24032 		IR 91054.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 400
Idd,A: 10
Rds(on), Ohm: 0.55
JHGF: THT
verfügbar: 6 Stück
1+0.5 EUR
IRF740PBF
Produktcode: 162988 		Siliconix 91054.pdf Transistoren > MOSFET N-CH
Uds,V: 400 V
Idd,A: 10 А
Rds(on), Ohm: 0,55 Ohm
Ciss, pF/Qg, nC: 1400/63
JHGF: THT
auf Bestellung 94 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 500 Stück:
500 Stück - erwartet
IRF740SPBF IRF740SPBF
Produktcode: 154285 		Siliconix sihf740s.pdf Transistoren > MOSFET N-CH
Gehäuse: D2PAK (TO-263)
Uds,V: 400 V
Idd,A: 10 A
Rds(on), Ohm: 0,55 Ohm
Ciss, pF/Qg, nC: 1400/63
JHGF: SMD
auf Bestellung 82 Stück:
Lieferzeit 21-28 Tag (e)
IRF740SPBF IRF740SPBF
Produktcode: 32580 		IR sihf740s.pdf Transistoren > MOSFET N-CH
Gehäuse: D2Pak
Uds,V: 400
Idd,A: 10
Rds(on), Ohm: 0.48
Ciss, pF/Qg, nC: 1400/35
JHGF: SMD
auf Bestellung 11 Stück:
Lieferzeit 21-28 Tag (e)
1+1 EUR
10+ 0.88 EUR
IRF740 Siliconix 91054.pdf IRF740.pdf N-MOSFET 10A 400V 125W 0.55Ω IRF740 TIRF740
Anzahl je Verpackung: 10 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.22 EUR
Mindestbestellmenge: 20
IRF740 HXY MOSFET 91054.pdf IRF740.pdf Transistor N-Channel MOSFET; 420V; 30V; 500mOhm; 11A; 87W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; IRF740 HXY MOSFET TIRF740 HXY
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
25+1.34 EUR
Mindestbestellmenge: 25
IRF740 IR 91054.pdf IRF740.pdf Транз. Пол. БМ N-MOSFET TO220AB Udss=400V; Id=10A; Pdmax=125W; Rds=0,55 Ohm
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
1+4.14 EUR
10+ 3.67 EUR
IRF7401TR UMW Transistor N-Channel MOSFET; 20V; 12V; 30mOhm; 8,7A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7401; IRF7401TR; SP001566310; SP001551308; IRF7401TR UMW TIRF7401 UMW
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
50+0.86 EUR
Mindestbestellmenge: 50
IRF7401TR International Rectifier N-MOSFET 6.9A 20V 0.022Ω IRF7401 (95/Tube), IRF7401TR(4000/Tape&Reel) IRF7401 TIRF7401
Anzahl je Verpackung: 10 Stücke
auf Bestellung 179 Stücke:
Lieferzeit 7-14 Tag (e)
30+1.39 EUR
Mindestbestellmenge: 30
IRF7401TR-VB VBsemi N-MOSFET 6.9A 20V 0.022Ω IRF7401 (95/Tube), IRF7401TR(4000/Tape&Reel) IRF7401 TIRF7401
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
30+1.11 EUR
Mindestbestellmenge: 30
IRF7403TR Infineon irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c N-MOSFET 8.5A 30V 2.5W 0.022Ω IRF7403 smd TIRF7403
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
30+1.35 EUR
Mindestbestellmenge: 30
IRF7403TRPBF IRF7403TRPBF Infineon Technologies irf7403.pdf Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R
auf Bestellung 925 Stücke:
Lieferzeit 14-21 Tag (e)
IRF7403TRPBF IRF7403TRPBF Infineon Technologies irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+1.07 EUR
8000+ 1.02 EUR
Mindestbestellmenge: 4000
IRF7403TRPBF IRF7403TRPBF Infineon Technologies irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 8064 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.57 EUR
13+ 2.11 EUR
100+ 1.64 EUR
500+ 1.39 EUR
1000+ 1.13 EUR
2000+ 1.07 EUR
Mindestbestellmenge: 11
IRF7404PBF International Rectifier/Infineon irf7404pbf.pdf?fileId=5546d462533600a4015355fa31be1ba0 description Р-канальний ПТ; Udss, В = 20; Id = 6,7 A; Ptot, Вт = 2,5; Тип монт. = smd; Ciss, пФ @ Uds, В = 1500 @ 15; Qg, нКл = 50 @ 4,5 В; Rds = 40 мОм @ 3,2 A, 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 700 мВ @ 250 мкА; SOICN-8
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
10+0.73 EUR
11+ 0.63 EUR
100+ 0.55 EUR
Mindestbestellmenge: 10
IRF7404TR International Rectifier P-MOSFET 6.7A 20V 2.5W 0.04Ω IRF7404 smd TIRF7404
Anzahl je Verpackung: 20 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.5 EUR
Mindestbestellmenge: 20
IRF7404TR International Rectifier P-MOSFET 6.7A 20V 2.5W 0.04Ω IRF7404 smd TIRF7404
Anzahl je Verpackung: 20 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.18 EUR
Mindestbestellmenge: 40
IRF7404TRPBF IRF7404TRPBF Infineon Technologies irf7404.pdf description Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R
auf Bestellung 14767 Stücke:
Lieferzeit 14-21 Tag (e)
IRF7404TRPBF IRF7404TRPBF Infineon Technologies irf7404pbf.pdf?fileId=5546d462533600a4015355fa31be1ba0 description Description: MOSFET P-CH 20V 6.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 32000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.86 EUR
8000+ 0.81 EUR
12000+ 0.75 EUR
Mindestbestellmenge: 4000
IRF7404TRPBF IRF7404TRPBF Infineon Technologies irf7404pbf.pdf?fileId=5546d462533600a4015355fa31be1ba0 description Description: MOSFET P-CH 20V 6.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 36072 Stücke:
Lieferzeit 21-28 Tag (e)
12+2.26 EUR
14+ 1.96 EUR
100+ 1.35 EUR
500+ 1.13 EUR
1000+ 0.96 EUR
2000+ 0.86 EUR
Mindestbestellmenge: 12
IRF7406PBF International Rectifier/Infineon irf7406pbf.pdf?fileId=5546d462533600a4015355fa59a51baa description P-канальний ПТ; Udss, В = 30; Id = 5,8 А; Ptot, Вт = 2,5; Тип монт. = smd; Ciss, пФ @ Uds, В = 1100 @ 25; Qg, нКл = 59 @ 10 В; Rds = 45 мОм @ 2,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; SOICN-8
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
8+0.89 EUR
10+ 0.76 EUR
100+ 0.67 EUR
Mindestbestellmenge: 8
IRF7406TR JGSEMI Transistor P-Channel MOSFET; 30V; 20V; 80mOhm; 5,5A; 2,1W; -55°C ~ 125°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR JGSEMI TIRF7406 JGS
Anzahl je Verpackung: 50 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
100+0.53 EUR
Mindestbestellmenge: 100
IRF7406TR International Rectifier P-MOSFET 5.8A 30V 2.5W 0.045Ω IRF7406, IRF7406TR , Possible substitute: IRF9335 IRF7406 smd TIRF7406
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
50+2.69 EUR
Mindestbestellmenge: 50
IRF7406TR UMW Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR UMW TIRF7406 UMW
Anzahl je Verpackung: 50 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
100+0.47 EUR
Mindestbestellmenge: 100
IRF7406TRPBF International Rectifier/Infineon irf7406pbf.pdf?fileId=5546d462533600a4015355fa59a51baa description P-канальний ПТ; Id = 5.8 А; Ptot, Вт = 2.5; Udss, В = 30; Тип монт. = smd; Ciss, пФ @ Uds, В = 1100 @ 25 В; Qg, нКл = 59 @ 10 В; Rds = 45 мОм @ 2.8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; SOIC-8
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
4+1.84 EUR
10+ 1.59 EUR
100+ 1.4 EUR
Mindestbestellmenge: 4
IRF740ALPBF IRF740ALPBF VISHAY sihf740a.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 996 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.14 EUR
38+ 1.93 EUR
46+ 1.57 EUR
49+ 1.49 EUR
Mindestbestellmenge: 34
IRF740ALPBF IRF740ALPBF Vishay Siliconix sihf740a.pdf Description: MOSFET N-CH 400V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 865 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.15 EUR
50+ 5.74 EUR
100+ 4.72 EUR
500+ 4 EUR
Mindestbestellmenge: 4
IRF740AP Siliconix N-MOSFET 10A 400V 125W IRF740A TIRF740 a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.51 EUR
Mindestbestellmenge: 20
IRF740APBF IRF740APBF VISHAY IRF740APBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 963 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.69 EUR
48+ 1.52 EUR
54+ 1.34 EUR
59+ 1.22 EUR
63+ 1.14 EUR
250+ 1.13 EUR
Mindestbestellmenge: 43
IRF740APBF IRF740APBF VISHAY IRF740APBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 963 Stücke:
Lieferzeit 7-14 Tag (e)
43+1.69 EUR
48+ 1.52 EUR
54+ 1.34 EUR
59+ 1.22 EUR
63+ 1.14 EUR
250+ 1.13 EUR
Mindestbestellmenge: 43
IRF740APBF IRF740APBF Vishay 91051.pdf Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB
auf Bestellung 1020 Stücke:
Lieferzeit 14-21 Tag (e)
IRF740APBF Vishay/IR 91051.pdf N-канальний ПТ; Udss, В = 400; Id = 10 А; Ptot, Вт = 125; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 1030 @ 25; Qg, нКл = 36 @ 10 В; Rds = 550 мОм @ 6 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; TO-220AB
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
1+6.79 EUR
10+ 2.51 EUR
100+ 2.21 EUR
IRF740APBF IRF740APBF Vishay Siliconix 91051.pdf Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 807 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.42 EUR
50+ 5.17 EUR
100+ 4.25 EUR
500+ 3.6 EUR
Mindestbestellmenge: 5
IRF740APBF-BE3 IRF740APBF-BE3 Vishay Siliconix 91051.pdf Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 1653 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.42 EUR
50+ 5.17 EUR
100+ 4.25 EUR
500+ 3.6 EUR
1000+ 3.05 EUR
Mindestbestellmenge: 5
IRF740ASPBF IRF740ASPBF VISHAY IRF740A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1551 Stücke:
Lieferzeit 14-21 Tag (e)
39+1.84 EUR
43+ 1.69 EUR
49+ 1.49 EUR
56+ 1.29 EUR
59+ 1.22 EUR
Mindestbestellmenge: 39
IRF740ASPBF IRF740ASPBF VISHAY IRF740A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1551 Stücke:
Lieferzeit 7-14 Tag (e)
39+1.84 EUR
43+ 1.69 EUR
49+ 1.49 EUR
56+ 1.29 EUR
59+ 1.22 EUR
Mindestbestellmenge: 39
IRF740ASPBF IRF740ASPBF Vishay sihf740a.pdf Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
IRF740ASPBF IRF740ASPBF Vishay Siliconix sihf740a.pdf Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 3175 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.01 EUR
50+ 4.82 EUR
100+ 3.96 EUR
500+ 3.35 EUR
1000+ 2.85 EUR
2000+ 2.7 EUR
Mindestbestellmenge: 5
IRF740ASTRLPBF IRF740ASTRLPBF VISHAY sihf740a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.15 EUR
27+ 2.72 EUR
61+ 1.19 EUR
64+ 1.13 EUR
Mindestbestellmenge: 23
IRF740ASTRLPBF IRF740ASTRLPBF VISHAY sihf740a.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 798 Stücke:
Lieferzeit 7-14 Tag (e)
23+3.15 EUR
27+ 2.72 EUR
61+ 1.19 EUR
64+ 1.13 EUR
Mindestbestellmenge: 23
IRF740ASTRLPBF IRF740ASTRLPBF Vishay sihf740a.pdf Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 11200 Stücke:
Lieferzeit 14-21 Tag (e)
IRF740BPBF IRF740BPBF VISHAY irf740b.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 23A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 23A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 898 Stücke:
Lieferzeit 14-21 Tag (e)
51+1.42 EUR
57+ 1.27 EUR
69+ 1.04 EUR
73+ 0.99 EUR
Mindestbestellmenge: 51
IRF740BPBF IRF740BPBF VISHAY irf740b.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 23A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 23A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 898 Stücke:
Lieferzeit 7-14 Tag (e)
51+1.42 EUR
57+ 1.27 EUR
69+ 1.04 EUR
73+ 0.99 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 51
IRF740BPBF IRF740BPBF Vishay Siliconix irf740b.pdf Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
auf Bestellung 341 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.43 EUR
50+ 2.76 EUR
100+ 2.19 EUR
Mindestbestellmenge: 8
IRF740LCPBF IRF740LCPBF VISHAY IRF740LC.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.34 EUR
60+ 1.2 EUR
68+ 1.06 EUR
77+ 0.93 EUR
82+ 0.87 EUR
Mindestbestellmenge: 54
IRF740LCPBF IRF740LCPBF VISHAY IRF740LC.pdf description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 357 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.34 EUR
60+ 1.2 EUR
68+ 1.06 EUR
77+ 0.93 EUR
82+ 0.87 EUR
Mindestbestellmenge: 54
IRF740LCPBF IRF740LCPBF Vishay Siliconix 91053.pdf description Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 2520 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.99 EUR
50+ 5.55 EUR
100+ 4.75 EUR
500+ 4.23 EUR
1000+ 3.62 EUR
2000+ 3.41 EUR
Mindestbestellmenge: 4
IRF740LCPBF-BE3 IRF740LCPBF-BE3 Vishay Siliconix 91053.pdf Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 987 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.99 EUR
50+ 5.55 EUR
100+ 4.75 EUR
500+ 4.23 EUR
Mindestbestellmenge: 4
IRF740PBF IRF740PBF VISHAY IRF740PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.3 EUR
64+ 1.13 EUR
71+ 1.02 EUR
80+ 0.9 EUR
84+ 0.86 EUR
250+ 0.82 EUR
Mindestbestellmenge: 55
IRF740PBF IRF740PBF VISHAY IRF740PBF.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 986 Stücke:
Lieferzeit 7-14 Tag (e)
55+1.3 EUR
64+ 1.13 EUR
71+ 1.02 EUR
80+ 0.9 EUR
84+ 0.86 EUR
250+ 0.82 EUR
Mindestbestellmenge: 55
IRF740PBF IRF740PBF Vishay Siliconix 91054.pdf Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 2055 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.71 EUR
50+ 3.79 EUR
100+ 3.12 EUR
500+ 2.64 EUR
1000+ 2.24 EUR
2000+ 2.13 EUR
Mindestbestellmenge: 6
IRF740PBF-BE3 IRF740PBF-BE3 Vishay Siliconix 91054.pdf Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 3807 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.71 EUR
50+ 3.79 EUR
100+ 3.12 EUR
500+ 2.64 EUR
1000+ 2.24 EUR
2000+ 2.13 EUR
Mindestbestellmenge: 6
IRF740S Siliconix sihf740s.pdf description Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK IRF740STR IRF740STRL IRF740STRR IRF740S IRF740S VISHAY TIRF740s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.59 EUR
Mindestbestellmenge: 20
IRF740S2515 IRF740S2515 Harris Corporation Description: 10A, 400V, 0.55OHM, N-CHANNEL, P
Packaging: Bulk
Part Status: Active
auf Bestellung 2200 Stücke:
Lieferzeit 21-28 Tag (e)
381+1.9 EUR
Mindestbestellmenge: 381
IRF740SPBF IRF740SPBF VISHAY IRF740SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 891 Stücke:
Lieferzeit 14-21 Tag (e)
37+1.94 EUR
41+ 1.76 EUR
47+ 1.54 EUR
52+ 1.39 EUR
55+ 1.32 EUR
250+ 1.29 EUR
Mindestbestellmenge: 37
IRF740SPBF IRF740SPBF VISHAY IRF740SPBF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 891 Stücke:
Lieferzeit 7-14 Tag (e)
37+1.94 EUR
41+ 1.76 EUR
47+ 1.54 EUR
52+ 1.39 EUR
55+ 1.32 EUR
250+ 1.29 EUR
Mindestbestellmenge: 37
IRF740SPBF IRF740SPBF Vishay sihf740s.pdf Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 607 Stücke:
Lieferzeit 14-21 Tag (e)
IRF740SPBF Vishay/IR sihf740s.pdf N-канальний ПТ; Udss, В = 400; Id = 10 А; Ptot, Вт = 3,1; Тип монт. = smd; Ciss, пФ @ Uds, В = 1400 @ 25; Qg, нКл = 63 @ 10 В; Rds = 550 мОм @ 6 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; D2PAK
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
3+3.2 EUR
10+ 2.76 EUR
100+ 2.43 EUR
Mindestbestellmenge: 3
IRF740SPBF IR sihf740s.pdf Транз. Пол. БМ N-MOSFET D2-Pak Udss=400V; Id=10A; Pdmax=125W; Rds=0,55 Ohm
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
1+6.7 EUR
10+ 5.93 EUR
IRF740SPBF IRF740SPBF Vishay Siliconix sihf740s.pdf Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 3337 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.45 EUR
50+ 5.2 EUR
100+ 4.28 EUR
500+ 3.62 EUR
1000+ 3.07 EUR
2000+ 2.92 EUR
Mindestbestellmenge: 5
IRF740PBF
Produktcode: 24032		 91054.pdf
IRF740PBF
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 400
Idd,A: 10
Rds(on), Ohm: 0.55
JHGF: THT
verfügbar: 6 Stück
Anzahl Preis ohne MwSt
1+0.5 EUR
IRF740PBF
Produktcode: 162988		 91054.pdf
Hersteller: Siliconix
Transistoren > MOSFET N-CH
Uds,V: 400 V
Idd,A: 10 А
Rds(on), Ohm: 0,55 Ohm
Ciss, pF/Qg, nC: 1400/63
JHGF: THT
auf Bestellung 94 Stück:
Lieferzeit 21-28 Tag (e)
erwartet 500 Stück:
500 Stück - erwartet
IRF740SPBF
Produktcode: 154285		 sihf740s.pdf
IRF740SPBF
Hersteller: Siliconix
Transistoren > MOSFET N-CH
Gehäuse: D2PAK (TO-263)
Uds,V: 400 V
Idd,A: 10 A
Rds(on), Ohm: 0,55 Ohm
Ciss, pF/Qg, nC: 1400/63
JHGF: SMD
auf Bestellung 82 Stück:
Lieferzeit 21-28 Tag (e)
IRF740SPBF
Produktcode: 32580		 sihf740s.pdf
IRF740SPBF
Hersteller: IR
Transistoren > MOSFET N-CH
Gehäuse: D2Pak
Uds,V: 400
Idd,A: 10
Rds(on), Ohm: 0.48
Ciss, pF/Qg, nC: 1400/35
JHGF: SMD
auf Bestellung 11 Stück:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1+1 EUR
10+ 0.88 EUR
IRF740 91054.pdf IRF740.pdf
Hersteller: Siliconix
N-MOSFET 10A 400V 125W 0.55Ω IRF740 TIRF740
Anzahl je Verpackung: 10 Stücke
auf Bestellung 37 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+2.22 EUR
Mindestbestellmenge: 20
IRF740 91054.pdf IRF740.pdf
Hersteller: HXY MOSFET
Transistor N-Channel MOSFET; 420V; 30V; 500mOhm; 11A; 87W; -55°C ~ 150°C; Equivalent: IRF740; IRF740-BE3; IRF740 HXY MOSFET TIRF740 HXY
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
25+1.34 EUR
Mindestbestellmenge: 25
IRF740 91054.pdf IRF740.pdf
Hersteller: IR
Транз. Пол. БМ N-MOSFET TO220AB Udss=400V; Id=10A; Pdmax=125W; Rds=0,55 Ohm
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+4.14 EUR
10+ 3.67 EUR
IRF7401TR
Hersteller: UMW
Transistor N-Channel MOSFET; 20V; 12V; 30mOhm; 8,7A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7401; IRF7401TR; SP001566310; SP001551308; IRF7401TR UMW TIRF7401 UMW
Anzahl je Verpackung: 25 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+0.86 EUR
Mindestbestellmenge: 50
IRF7401TR
Hersteller: International Rectifier
N-MOSFET 6.9A 20V 0.022Ω IRF7401 (95/Tube), IRF7401TR(4000/Tape&Reel) IRF7401 TIRF7401
Anzahl je Verpackung: 10 Stücke
auf Bestellung 179 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+1.39 EUR
Mindestbestellmenge: 30
IRF7401TR-VB
Hersteller: VBsemi
N-MOSFET 6.9A 20V 0.022Ω IRF7401 (95/Tube), IRF7401TR(4000/Tape&Reel) IRF7401 TIRF7401
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+1.11 EUR
Mindestbestellmenge: 30
IRF7403TR irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c
Hersteller: Infineon
N-MOSFET 8.5A 30V 2.5W 0.022Ω IRF7403 smd TIRF7403
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
30+1.35 EUR
Mindestbestellmenge: 30
IRF7403TRPBF irf7403.pdf
IRF7403TRPBF
Hersteller: Infineon Technologies
Trans MOSFET N-CH Si 30V 8.5A 8-Pin SOIC T/R
auf Bestellung 925 Stücke:
Lieferzeit 14-21 Tag (e)
IRF7403TRPBF irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c
IRF7403TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+1.07 EUR
8000+ 1.02 EUR
Mindestbestellmenge: 4000
IRF7403TRPBF irf7403pbf.pdf?fileId=5546d462533600a4015355fa23541b9c
IRF7403TRPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 8064 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.57 EUR
13+ 2.11 EUR
100+ 1.64 EUR
500+ 1.39 EUR
1000+ 1.13 EUR
2000+ 1.07 EUR
Mindestbestellmenge: 11
IRF7404PBF description irf7404pbf.pdf?fileId=5546d462533600a4015355fa31be1ba0
Hersteller: International Rectifier/Infineon
Р-канальний ПТ; Udss, В = 20; Id = 6,7 A; Ptot, Вт = 2,5; Тип монт. = smd; Ciss, пФ @ Uds, В = 1500 @ 15; Qg, нКл = 50 @ 4,5 В; Rds = 40 мОм @ 3,2 A, 4,5 В; Tексп, °C = -55...+150; Ugs(th) = 700 мВ @ 250 мкА; SOICN-8
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
10+0.73 EUR
11+ 0.63 EUR
100+ 0.55 EUR
Mindestbestellmenge: 10
IRF7404TR
Hersteller: International Rectifier
P-MOSFET 6.7A 20V 2.5W 0.04Ω IRF7404 smd TIRF7404
Anzahl je Verpackung: 20 Stücke
auf Bestellung 20 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+1.5 EUR
Mindestbestellmenge: 20
IRF7404TR
Hersteller: International Rectifier
P-MOSFET 6.7A 20V 2.5W 0.04Ω IRF7404 smd TIRF7404
Anzahl je Verpackung: 20 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
40+1.18 EUR
Mindestbestellmenge: 40
IRF7404TRPBF description irf7404.pdf
IRF7404TRPBF
Hersteller: Infineon Technologies
Trans MOSFET P-CH 20V 6.7A 8-Pin SOIC T/R
auf Bestellung 14767 Stücke:
Lieferzeit 14-21 Tag (e)
IRF7404TRPBF description irf7404pbf.pdf?fileId=5546d462533600a4015355fa31be1ba0
IRF7404TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 6.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 32000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.86 EUR
8000+ 0.81 EUR
12000+ 0.75 EUR
Mindestbestellmenge: 4000
IRF7404TRPBF description irf7404pbf.pdf?fileId=5546d462533600a4015355fa31be1ba0
IRF7404TRPBF
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 6.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 700mV @ 250µA (Min)
Supplier Device Package: 8-SO
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 15 V
auf Bestellung 36072 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
12+2.26 EUR
14+ 1.96 EUR
100+ 1.35 EUR
500+ 1.13 EUR
1000+ 0.96 EUR
2000+ 0.86 EUR
Mindestbestellmenge: 12
IRF7406PBF description irf7406pbf.pdf?fileId=5546d462533600a4015355fa59a51baa
Hersteller: International Rectifier/Infineon
P-канальний ПТ; Udss, В = 30; Id = 5,8 А; Ptot, Вт = 2,5; Тип монт. = smd; Ciss, пФ @ Uds, В = 1100 @ 25; Qg, нКл = 59 @ 10 В; Rds = 45 мОм @ 2,8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; SOICN-8
auf Bestellung 147 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
8+0.89 EUR
10+ 0.76 EUR
100+ 0.67 EUR
Mindestbestellmenge: 8
IRF7406TR
Hersteller: JGSEMI
Transistor P-Channel MOSFET; 30V; 20V; 80mOhm; 5,5A; 2,1W; -55°C ~ 125°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR JGSEMI TIRF7406 JGS
Anzahl je Verpackung: 50 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
100+0.53 EUR
Mindestbestellmenge: 100
IRF7406TR
Hersteller: International Rectifier
P-MOSFET 5.8A 30V 2.5W 0.045Ω IRF7406, IRF7406TR , Possible substitute: IRF9335 IRF7406 smd TIRF7406
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+2.69 EUR
Mindestbestellmenge: 50
IRF7406TR
Hersteller: UMW
Transistor P-Channel MOSFET; 30V; 20V; 70mOhm; 5,8A; 2,5W; -55°C ~ 150°C; Equivalent: IRF7406; IRF7406TR; IRF7406GTR; SP001551328; SP001554244; SP001563604; IRF7406TR UMW TIRF7406 UMW
Anzahl je Verpackung: 50 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
100+0.47 EUR
Mindestbestellmenge: 100
IRF7406TRPBF description irf7406pbf.pdf?fileId=5546d462533600a4015355fa59a51baa
Hersteller: International Rectifier/Infineon
P-канальний ПТ; Id = 5.8 А; Ptot, Вт = 2.5; Udss, В = 30; Тип монт. = smd; Ciss, пФ @ Uds, В = 1100 @ 25 В; Qg, нКл = 59 @ 10 В; Rds = 45 мОм @ 2.8 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 1 В @ 250 мкА; SOIC-8
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
4+1.84 EUR
10+ 1.59 EUR
100+ 1.4 EUR
Mindestbestellmenge: 4
IRF740ALPBF sihf740a.pdf
IRF740ALPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 996 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
34+2.14 EUR
38+ 1.93 EUR
46+ 1.57 EUR
49+ 1.49 EUR
Mindestbestellmenge: 34
IRF740ALPBF sihf740a.pdf
IRF740ALPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: I2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 865 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+7.15 EUR
50+ 5.74 EUR
100+ 4.72 EUR
500+ 4 EUR
Mindestbestellmenge: 4
IRF740AP
Hersteller: Siliconix
N-MOSFET 10A 400V 125W IRF740A TIRF740 a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+2.51 EUR
Mindestbestellmenge: 20
IRF740APBF IRF740APBF.pdf
IRF740APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 963 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
43+1.69 EUR
48+ 1.52 EUR
54+ 1.34 EUR
59+ 1.22 EUR
63+ 1.14 EUR
250+ 1.13 EUR
Mindestbestellmenge: 43
IRF740APBF IRF740APBF.pdf
IRF740APBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 963 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
43+1.69 EUR
48+ 1.52 EUR
54+ 1.34 EUR
59+ 1.22 EUR
63+ 1.14 EUR
250+ 1.13 EUR
Mindestbestellmenge: 43
IRF740APBF 91051.pdf
IRF740APBF
Hersteller: Vishay
Trans MOSFET N-CH 400V 10A 3-Pin(3+Tab) TO-220AB
auf Bestellung 1020 Stücke:
Lieferzeit 14-21 Tag (e)
IRF740APBF 91051.pdf
Hersteller: Vishay/IR
N-канальний ПТ; Udss, В = 400; Id = 10 А; Ptot, Вт = 125; Тип монт. = вивідний; Ciss, пФ @ Uds, В = 1030 @ 25; Qg, нКл = 36 @ 10 В; Rds = 550 мОм @ 6 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; TO-220AB
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+6.79 EUR
10+ 2.51 EUR
100+ 2.21 EUR
IRF740APBF 91051.pdf
IRF740APBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 807 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.42 EUR
50+ 5.17 EUR
100+ 4.25 EUR
500+ 3.6 EUR
Mindestbestellmenge: 5
IRF740APBF-BE3 91051.pdf
IRF740APBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 1653 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.42 EUR
50+ 5.17 EUR
100+ 4.25 EUR
500+ 3.6 EUR
1000+ 3.05 EUR
Mindestbestellmenge: 5
IRF740ASPBF IRF740A.pdf
IRF740ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1551 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
39+1.84 EUR
43+ 1.69 EUR
49+ 1.49 EUR
56+ 1.29 EUR
59+ 1.22 EUR
Mindestbestellmenge: 39
IRF740ASPBF IRF740A.pdf
IRF740ASPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1551 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
39+1.84 EUR
43+ 1.69 EUR
49+ 1.49 EUR
56+ 1.29 EUR
59+ 1.22 EUR
Mindestbestellmenge: 39
IRF740ASPBF sihf740a.pdf
IRF740ASPBF
Hersteller: Vishay
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 1500 Stücke:
Lieferzeit 14-21 Tag (e)
IRF740ASPBF sihf740a.pdf
IRF740ASPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
auf Bestellung 3175 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.01 EUR
50+ 4.82 EUR
100+ 3.96 EUR
500+ 3.35 EUR
1000+ 2.85 EUR
2000+ 2.7 EUR
Mindestbestellmenge: 5
IRF740ASTRLPBF sihf740a.pdf
IRF740ASTRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 798 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
23+3.15 EUR
27+ 2.72 EUR
61+ 1.19 EUR
64+ 1.13 EUR
Mindestbestellmenge: 23
IRF740ASTRLPBF sihf740a.pdf
IRF740ASTRLPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 798 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
23+3.15 EUR
27+ 2.72 EUR
61+ 1.19 EUR
64+ 1.13 EUR
Mindestbestellmenge: 23
IRF740ASTRLPBF sihf740a.pdf
IRF740ASTRLPBF
Hersteller: Vishay
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 11200 Stücke:
Lieferzeit 14-21 Tag (e)
IRF740BPBF irf740b.pdf
IRF740BPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 23A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 23A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 898 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
51+1.42 EUR
57+ 1.27 EUR
69+ 1.04 EUR
73+ 0.99 EUR
Mindestbestellmenge: 51
IRF740BPBF irf740b.pdf
IRF740BPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; Idm: 23A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Pulsed drain current: 23A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 898 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
51+1.42 EUR
57+ 1.27 EUR
69+ 1.04 EUR
73+ 0.99 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 51
IRF740BPBF irf740b.pdf
IRF740BPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 5A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 526 pF @ 100 V
auf Bestellung 341 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.43 EUR
50+ 2.76 EUR
100+ 2.19 EUR
Mindestbestellmenge: 8
IRF740LCPBF description IRF740LC.pdf
IRF740LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
54+1.34 EUR
60+ 1.2 EUR
68+ 1.06 EUR
77+ 0.93 EUR
82+ 0.87 EUR
Mindestbestellmenge: 54
IRF740LCPBF description IRF740LC.pdf
IRF740LCPBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 357 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
54+1.34 EUR
60+ 1.2 EUR
68+ 1.06 EUR
77+ 0.93 EUR
82+ 0.87 EUR
Mindestbestellmenge: 54
IRF740LCPBF description 91053.pdf
IRF740LCPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 2520 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.99 EUR
50+ 5.55 EUR
100+ 4.75 EUR
500+ 4.23 EUR
1000+ 3.62 EUR
2000+ 3.41 EUR
Mindestbestellmenge: 4
IRF740LCPBF-BE3 91053.pdf
IRF740LCPBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
auf Bestellung 987 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4+6.99 EUR
50+ 5.55 EUR
100+ 4.75 EUR
500+ 4.23 EUR
Mindestbestellmenge: 4
IRF740PBF IRF740PBF.pdf
IRF740PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 986 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
55+1.3 EUR
64+ 1.13 EUR
71+ 1.02 EUR
80+ 0.9 EUR
84+ 0.86 EUR
250+ 0.82 EUR
Mindestbestellmenge: 55
IRF740PBF IRF740PBF.pdf
IRF740PBF
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 986 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
55+1.3 EUR
64+ 1.13 EUR
71+ 1.02 EUR
80+ 0.9 EUR
84+ 0.86 EUR
250+ 0.82 EUR
Mindestbestellmenge: 55
IRF740PBF 91054.pdf
IRF740PBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 2055 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.71 EUR
50+ 3.79 EUR
100+ 3.12 EUR
500+ 2.64 EUR
1000+ 2.24 EUR
2000+ 2.13 EUR
Mindestbestellmenge: 6
IRF740PBF-BE3 91054.pdf
IRF740PBF-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 5.3A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 3807 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
6+4.71 EUR
50+ 3.79 EUR
100+ 3.12 EUR
500+ 2.64 EUR
1000+ 2.24 EUR
2000+ 2.13 EUR
Mindestbestellmenge: 6
IRF740S description sihf740s.pdf
Hersteller: Siliconix
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK IRF740STR IRF740STRL IRF740STRR IRF740S IRF740S VISHAY TIRF740s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
20+2.59 EUR
Mindestbestellmenge: 20
IRF740S2515
IRF740S2515
Hersteller: Harris Corporation
Description: 10A, 400V, 0.55OHM, N-CHANNEL, P
Packaging: Bulk
Part Status: Active
auf Bestellung 2200 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
381+1.9 EUR
Mindestbestellmenge: 381
IRF740SPBF IRF740SPBF.pdf
IRF740SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 891 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
37+1.94 EUR
41+ 1.76 EUR
47+ 1.54 EUR
52+ 1.39 EUR
55+ 1.32 EUR
250+ 1.29 EUR
Mindestbestellmenge: 37
IRF740SPBF IRF740SPBF.pdf
IRF740SPBF
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; 125W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 891 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
37+1.94 EUR
41+ 1.76 EUR
47+ 1.54 EUR
52+ 1.39 EUR
55+ 1.32 EUR
250+ 1.29 EUR
Mindestbestellmenge: 37
IRF740SPBF sihf740s.pdf
IRF740SPBF
Hersteller: Vishay
Trans MOSFET N-CH 400V 10A 3-Pin(2+Tab) D2PAK
auf Bestellung 607 Stücke:
Lieferzeit 14-21 Tag (e)
IRF740SPBF sihf740s.pdf
Hersteller: Vishay/IR
N-канальний ПТ; Udss, В = 400; Id = 10 А; Ptot, Вт = 3,1; Тип монт. = smd; Ciss, пФ @ Uds, В = 1400 @ 25; Qg, нКл = 63 @ 10 В; Rds = 550 мОм @ 6 A, 10 В; Tексп, °C = -55...+150; Ugs(th) = 4 В @ 250 мкА; D2PAK
auf Bestellung 274 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
3+3.2 EUR
10+ 2.76 EUR
100+ 2.43 EUR
Mindestbestellmenge: 3
IRF740SPBF sihf740s.pdf
Hersteller: IR
Транз. Пол. БМ N-MOSFET D2-Pak Udss=400V; Id=10A; Pdmax=125W; Rds=0,55 Ohm
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
1+6.7 EUR
10+ 5.93 EUR
IRF740SPBF sihf740s.pdf
IRF740SPBF
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 400V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 3337 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5+6.45 EUR
50+ 5.2 EUR
100+ 4.28 EUR
500+ 3.62 EUR
1000+ 3.07 EUR
2000+ 2.92 EUR
Mindestbestellmenge: 5
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