Produkte > B1M
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||
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| B1M080120HC | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Technology: SiC Case: TO247-3 Mounting: THT On-state resistance: 80mΩ Kind of package: tube Power dissipation: 241W Gate charge: 149nC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 80A Drain-source voltage: 1.2kV Drain current: 27A Type of transistor: N-MOSFET Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | auf Bestellung 44 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1M080120HC | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Technology: SiC Case: TO247-3 Mounting: THT On-state resistance: 80mΩ Kind of package: tube Power dissipation: 241W Gate charge: 149nC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 80A Drain-source voltage: 1.2kV Drain current: 27A Type of transistor: N-MOSFET Polarisation: unipolar | auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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| B1M080120HK | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 149nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 80A Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 27A On-state resistance: 80mΩ Type of transistor: N-MOSFET Power dissipation: 241W | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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| B1M080120HK | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: Kelvin terminal Gate charge: 149nC Technology: SiC Kind of channel: enhanced Gate-source voltage: -5...20V Pulsed drain current: 80A Mounting: THT Case: TO247-4 Drain-source voltage: 1.2kV Drain current: 27A On-state resistance: 80mΩ Type of transistor: N-MOSFET Power dissipation: 241W Anzahl je Verpackung: 1 Stücke | auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1M1774404EB4230FP | Corning | Corning 4 PORT 4 SCAPC 230FT SST FLAT | Produkt ist nicht verfügbar | |||||||||
| B1MF | DC COMPONENTS | Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 35A; MBFL; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1A Features of semiconductor devices: glass passivated Case: MBFL Max. forward impulse current: 35A Electrical mounting: SMT Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke | auf Bestellung 13295 Stücke: Lieferzeit 7-14 Tag (e) |
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| B1MF | DC COMPONENTS | Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 35A; MBFL; SMT Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 1A Features of semiconductor devices: glass passivated Case: MBFL Max. forward impulse current: 35A Electrical mounting: SMT Kind of package: reel; tape | auf Bestellung 13295 Stücke: Lieferzeit 14-21 Tag (e) |
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