Produkte > B1M
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | ||||||
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| B1M080120HC | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 27A Pulsed drain current: 80A Power dissipation: 241W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 80mΩ Mounting: THT Gate charge: 149nC Kind of package: tube Kind of channel: enhancement | auf Bestellung 36 Stücke: Lieferzeit 14-21 Tag (e) |
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| B1M080120HK | BASiC SEMICONDUCTOR | Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 27A; Idm: 80A; 241W Case: TO247-4 Mounting: THT Kind of package: tube On-state resistance: 80mΩ Drain current: 27A Power dissipation: 241W Pulsed drain current: 80A Drain-source voltage: 1.2kV Kind of channel: enhancement Technology: SiC Type of transistor: N-MOSFET Features of semiconductor devices: Kelvin terminal Polarisation: unipolar Gate-source voltage: -5...20V Gate charge: 149nC | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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| B1M1774404EB4230FP | Corning | Corning 4 PORT 4 SCAPC 230FT SST FLAT | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||
| B1MF | DC COMPONENTS | Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; 1kV; If: 1A; Ifsm: 35A; MBFL; SMT Load current: 1A Max. forward impulse current: 35A Max. off-state voltage: 1kV Features of semiconductor devices: glass passivated Case: MBFL Kind of package: reel; tape Type of bridge rectifier: single-phase Electrical mounting: SMT | auf Bestellung 182 Stücke: Lieferzeit 14-21 Tag (e) |
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