Technische Details 10ETF12 IR
Description: DIODE GEN PURP 1.2KV 10A TO220AC, Packaging: Tube, Package / Case: TO-220-2, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 310 ns, Technology: Standard, Current - Average Rectified (Io): 10A, Supplier Device Package: TO-220AC, Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A, Current - Reverse Leakage @ Vr: 100 µA @ 1200 V.
Weitere Produktangebote 10ETF12
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
10ETF12 | Hersteller : Vishay |
 Rectifier Diode Switching 1.2KV 10A 310ns 2-Pin(2+Tab) TO-220AC |
Produkt ist nicht verfügbar |
|
 |
10ETF12 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 1.2KV 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 310 ns Technology: Standard Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
Produkt ist nicht verfügbar |
|
 |
10ETF12 | Hersteller : Vishay Semiconductors |
Rectifiers RECOMMENDED ALT 78-VS-10ETF12-M3 |
Produkt ist nicht verfügbar |