1214-32L Microsemi Corporation


5719-1214-32lr5-datasheet Hersteller: Microsemi Corporation
Description: RF TRANS NPN 50V 1.4GHZ 55AW-1
Packaging: Bulk
Package / Case: 55AW-1
Mounting Type: Chassis Mount
Transistor Type: NPN
Operating Temperature: 200°C (TJ)
Gain: 7.8dB ~ 8.9dB
Power - Max: 125W
Current - Collector (Ic) (Max): 5A
Voltage - Collector Emitter Breakdown (Max): 50V
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
Frequency - Transition: 1.2GHz ~ 1.4GHz
Supplier Device Package: 55AW-1
Part Status: Obsolete
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details 1214-32L Microsemi Corporation

Description: RF TRANS NPN 50V 1.4GHZ 55AW-1, Packaging: Bulk, Package / Case: 55AW-1, Mounting Type: Chassis Mount, Transistor Type: NPN, Operating Temperature: 200°C (TJ), Gain: 7.8dB ~ 8.9dB, Power - Max: 125W, Current - Collector (Ic) (Max): 5A, Voltage - Collector Emitter Breakdown (Max): 50V, DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V, Frequency - Transition: 1.2GHz ~ 1.4GHz, Supplier Device Package: 55AW-1, Part Status: Obsolete.

Weitere Produktangebote 1214-32L

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
1214-32L 1214-32L Hersteller : Microchip / Microsemi 1214-32LR5-1593301.pdf RF Bipolar Transistors Bipolar/LDMOS Transistor
Produkt ist nicht verfügbar