15KP180CA

15KP180CA MDE Semiconductor Inc


15KP_Series.pdf Hersteller: MDE Semiconductor Inc
Description: TVS DIODE BP 180VRWM 288.5VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 52.3A
Voltage - Reverse Standoff (Typ): 180V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 201.1V
Voltage - Clamping (Max) @ Ipp: 288.5V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
auf Bestellung 1000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+24.49 EUR
Mindestbestellmenge: 2
Produktrezensionen
Produktbewertung abgeben

Technische Details 15KP180CA MDE Semiconductor Inc

Description: TVS DIODE BP 180VRWM 288.5VC, Packaging: Bulk, Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 52.3A, Voltage - Reverse Standoff (Typ): 180V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 201.1V, Voltage - Clamping (Max) @ Ipp: 288.5V, Power - Peak Pulse: 15000W (15kW), Power Line Protection: No.

Weitere Produktangebote 15KP180CA

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
15KP180CA 15KP180CA Hersteller : CDIL 15KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 201.1V; 52.3A; bidirectional; R6; 15kW; bulk
Type of diode: TVS
Max. off-state voltage: 180V
Breakdown voltage: 201.1V
Max. forward impulse current: 52.3A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Peak pulse power dissipation: 15kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
15KP180CA 15KP180CA Hersteller : CDIL 15KP_ser.PDF Category: Bidirectional THT transil diodes
Description: Diode: TVS; 201.1V; 52.3A; bidirectional; R6; 15kW; bulk
Type of diode: TVS
Max. off-state voltage: 180V
Breakdown voltage: 201.1V
Max. forward impulse current: 52.3A
Semiconductor structure: bidirectional
Case: R6
Mounting: THT
Leakage current: 10µA
Peak pulse power dissipation: 15kW
Kind of package: bulk
Features of semiconductor devices: glass passivated
Produkt ist nicht verfügbar