15KPA160CA MDE Semiconductor Inc
Hersteller: MDE Semiconductor IncDescription: TVS DIODE BP 160VRWM 258.6VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 58.4A
Voltage - Reverse Standoff (Typ): 160V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 178.7V
Voltage - Clamping (Max) @ Ipp: 258.6V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 23.66 EUR |
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Technische Details 15KPA160CA MDE Semiconductor Inc
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 187.2V; 58.4A; bidirectional; ±5%; P600; 15kW; reel,tape, Type of diode: TVS, Peak pulse power dissipation: 15kW, Max. off-state voltage: 160V, Breakdown voltage: 187.2V, Max. forward impulse current: 58.4A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: P600, Mounting: THT, Leakage current: 2µA, Kind of package: reel; tape, Features of semiconductor devices: glass passivated, Anzahl je Verpackung: 800 Stücke.
Weitere Produktangebote 15KPA160CA
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Verfügbarkeit |
Preis ohne MwSt |
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15KPA160CA | Hersteller : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 187.2V; 58.4A; bidirectional; ±5%; P600; 15kW; reel,tape Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 160V Breakdown voltage: 187.2V Max. forward impulse current: 58.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Anzahl je Verpackung: 800 Stücke |
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15KPA160CA | Hersteller : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 187.2V; 58.4A; bidirectional; ±5%; P600; 15kW; reel,tape Type of diode: TVS Peak pulse power dissipation: 15kW Max. off-state voltage: 160V Breakdown voltage: 187.2V Max. forward impulse current: 58.4A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: reel; tape Features of semiconductor devices: glass passivated |
Produkt ist nicht verfügbar |