Technische Details 1N3595US/TR Microchip Technology
Description: DIODE GEN PURP 4A B SQ-MELF, Packaging: Tape & Reel (TR), Package / Case: SQ-MELF, B, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Standard, Current - Average Rectified (Io): 4A, Supplier Device Package: B, SQ-MELF, Operating Temperature - Junction: -65°C ~ 150°C, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Current - Reverse Leakage @ Vr: 1 nA @ 125 V.
Weitere Produktangebote 1N3595US/TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
1N3595US/TR | Hersteller : Microchip Technology |
 Switching Diode Rectifier |
Produkt ist nicht verfügbar |
|
 |
1N3595US/TR | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 4A B SQ-MELF Packaging: Tape & Reel (TR) Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 150°C Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 1 nA @ 125 V |
Produkt ist nicht verfügbar |
|
 |
1N3595US/TR | Hersteller : Microchip Technology |
Rectifiers Signal or Computer Diode |
Produkt ist nicht verfügbar |