auf Bestellung 237 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 30.78 EUR |
| 10+ | 27.69 EUR |
| 50+ | 25.22 EUR |
| 100+ | 22.75 EUR |
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Technische Details 1N3766 GeneSiC Semiconductor
Description: DIODE GEN PURP 800V 35A DO5, Packaging: Bulk, Package / Case: DO-203AB, DO-5, Stud, Mounting Type: Chassis, Stud Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 35A, Supplier Device Package: DO-5, Operating Temperature - Junction: -65°C ~ 190°C, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A, Current - Reverse Leakage @ Vr: 10 µA @ 50 V.
Weitere Produktangebote 1N3766
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 1N3766 | Hersteller : GeneSiC Semiconductor |
 Description: DIODE GEN PURP 800V 35A DO5Packaging: Bulk Package / Case: DO-203AB, DO-5, Stud Mounting Type: Chassis, Stud Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 35A Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 190°C Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 35 A Current - Reverse Leakage @ Vr: 10 µA @ 50 V |
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