Technische Details 1N4006-E353 Vishay
Description: DIODE GEN PURP 800V 1A DO204AL, Packaging: Tape & Box (TB), Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-204AL (DO-41), Operating Temperature - Junction: -50°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 800 V.
Weitere Produktangebote 1N4006-E353
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
1N4006-E3/53 | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 800V 1A DO204ALPackaging: Tape & Box (TB) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V |
Produkt ist nicht verfügbar |
|
 |
1N4006-E3/53 | Hersteller : Vishay General Semiconductor |
Rectifiers Vr/800V Io/1A Trim Leads |
Produkt ist nicht verfügbar |