1N4150W-G3-08 Vishay Semiconductors
auf Bestellung 14980 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
72+ | 0.73 EUR |
104+ | 0.5 EUR |
213+ | 0.24 EUR |
1000+ | 0.14 EUR |
2500+ | 0.12 EUR |
10000+ | 0.099 EUR |
15000+ | 0.091 EUR |
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Technische Details 1N4150W-G3-08 Vishay Semiconductors
Description: DIODE GEN PURP 50V 200MA SOD123, Packaging: Tape & Reel (TR), Package / Case: SOD-123, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: SOD-123, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Current - Reverse Leakage @ Vr: 100 nA @ 50 V.
Weitere Produktangebote 1N4150W-G3-08
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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1N4150W-G3-08 | Hersteller : Vishay | Diode Small Signal Switching 50V 0.3A 2-Pin SOD-123 T/R |
Produkt ist nicht verfügbar |
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1N4150W-G3-08 | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 50V 200MA SOD123 Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 50 V |
Produkt ist nicht verfügbar |