1N4151W-G3-18

1N4151W-G3-18 Vishay General Semiconductor - Diodes Division


1n4151wg.pdf Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 150MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
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Technische Details 1N4151W-G3-18 Vishay General Semiconductor - Diodes Division

Description: DIODE GEN PURP 50V 150MA SOD123, Packaging: Tape & Reel (TR), Package / Case: SOD-123, Mounting Type: Surface Mount, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Current - Average Rectified (Io): 150mA, Supplier Device Package: SOD-123, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA, Current - Reverse Leakage @ Vr: 50 nA @ 50 V.

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1N4151W-G3-18 1N4151W-G3-18 Hersteller : Vishay Semiconductors 1n4151wg.pdf Diodes - General Purpose, Power, Switching 75 Volt 500mA 2ns
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