1N4448 A0G Taiwan Semiconductor
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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5000+ | 0.041 EUR |
10000+ | 0.031 EUR |
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Technische Details 1N4448 A0G Taiwan Semiconductor
Description: DIODE GEN PURP 100V 150MA DO35, Packaging: Tape & Box (TB), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Current - Average Rectified (Io): 150mA, Supplier Device Package: DO-35, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA, Current - Reverse Leakage @ Vr: 5 µA @ 75 V.
Weitere Produktangebote 1N4448 A0G nach Preis ab 0.14 EUR bis 0.72 EUR
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1N4448 A0G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: reel; tape Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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1N4448 A0G | Hersteller : TAIWAN SEMICONDUCTOR |
Category: THT universal diodes Description: Diode: switching; THT; 100V; 0.15A; reel,tape; Ifsm: 2A; DO35; 500mW Type of diode: switching Mounting: THT Max. off-state voltage: 100V Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Capacitance: 4pF Case: DO35 Max. forward voltage: 1V Max. forward impulse current: 2A Power dissipation: 0.5W Kind of package: reel; tape |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4448 A0G | Hersteller : Taiwan Semiconductor | Rectifier Diode Small Signal Switching 100V 0.15A 4ns 2-Pin DO-35 Ammo |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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1N4448 A0G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 150MA DO35 Packaging: Tape & Box (TB) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 150mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
Produkt ist nicht verfügbar |
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1N4448 A0G | Hersteller : Taiwan Semiconductor | Diodes - General Purpose, Power, Switching 100V, 0.15A, Switching Diode & Array |
Produkt ist nicht verfügbar |