auf Bestellung 23811 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 509+ | 0.31 EUR |
| 536+ | 0.28 EUR |
| 541+ | 0.27 EUR |
| 542+ | 0.26 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.24 EUR |
| 6000+ | 0.23 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N5062TAP Vishay
Description: DIODE AVALANCHE 800V 2A SOD57, Packaging: Tape & Box (TB), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 µs, Technology: Avalanche, Capacitance @ Vr, F: 40pF @ 0V, 1MHz, Current - Average Rectified (Io): 2A, Supplier Device Package: SOD-57, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A, Current - Reverse Leakage @ Vr: 1 µA @ 800 V.
Weitere Produktangebote 1N5062TAP nach Preis ab 0.23 EUR bis 1.53 EUR
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1N5062TAP | Hersteller : Vishay |
 Diode Switching 800V 2A 2-Pin SOD-57 Ammo |
auf Bestellung 23811 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5062TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2A SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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1N5062TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us Case: SOD57 Mounting: THT Kind of package: Ammo Pack Semiconductor structure: single diode Max. off-state voltage: 0.8kV Features of semiconductor devices: avalanche breakdown effect; glass passivated Reverse recovery time: 4µs Type of diode: rectifying Max. forward voltage: 1.15V Load current: 2A Max. forward impulse current: 50A Leakage current: 0.1mA Capacitance: 40pF Anzahl je Verpackung: 1 Stücke |
auf Bestellung 517 Stücke: Lieferzeit 7-14 Tag (e) |
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1N5062TAP | Hersteller : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 2A; Ammo Pack; Ifsm: 50A; SOD57; 4us Case: SOD57 Mounting: THT Kind of package: Ammo Pack Semiconductor structure: single diode Max. off-state voltage: 0.8kV Features of semiconductor devices: avalanche breakdown effect; glass passivated Reverse recovery time: 4µs Type of diode: rectifying Max. forward voltage: 1.15V Load current: 2A Max. forward impulse current: 50A Leakage current: 0.1mA Capacitance: 40pF |
auf Bestellung 517 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5062TAP | Hersteller : Vishay Semiconductors |
Rectifiers 2.0 Amp 800 Volt 50 Amp IFSM |
auf Bestellung 47320 Stücke: Lieferzeit 14-28 Tag (e) |
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1N5062TAP | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 800V 2A SOD57 Packaging: Cut Tape (CT) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4 µs Technology: Avalanche Capacitance @ Vr, F: 40pF @ 0V, 1MHz Current - Average Rectified (Io): 2A Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2.5 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
auf Bestellung 9609 Stücke: Lieferzeit 21-28 Tag (e) |
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1N5062TAP | Hersteller : Vishay |
Diode Switching 800V 2A 2-Pin SOD-57 Ammo |
Produkt ist nicht verfügbar |
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1N5062TAP | Hersteller : Vishay |
Rectifier Diode Switching 800V 2A 4000ns 2-Pin SOD-57 Ammo |
Produkt ist nicht verfügbar |