1N5282TR ON Semiconductor
auf Bestellung 10000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
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10000+ | 0.036 EUR |
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Produktbewertung abgeben
Technische Details 1N5282TR ON Semiconductor
Description: DIODE GEN PURP 80V 200MA DO35, Packaging: Tape & Reel (TR), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz, Current - Average Rectified (Io): 200mA, Supplier Device Package: DO-35, Operating Temperature - Junction: 175°C (Max), Part Status: Active, Voltage - DC Reverse (Vr) (Max): 80 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA, Current - Reverse Leakage @ Vr: 100 nA @ 55 V.
Weitere Produktangebote 1N5282TR nach Preis ab 0.036 EUR bis 0.51 EUR
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1N5282TR | Hersteller : ON Semiconductor | Diode Small Signal Switching 80V 0.2A 2-Pin DO-35 T/R |
auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5282TR | Hersteller : onsemi |
Description: DIODE GEN PURP 80V 200MA DO35 Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 55 V |
auf Bestellung 120000 Stücke: Lieferzeit 21-28 Tag (e) |
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1N5282TR | Hersteller : Fairchild Semiconductor |
Description: DIODE GEN PURP 80V 200MA DO35 Packaging: Bulk Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 55 V |
auf Bestellung 60204 Stücke: Lieferzeit 21-28 Tag (e) |
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1N5282TR | Hersteller : onsemi |
Description: DIODE GEN PURP 80V 200MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 900 mV @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 55 V |
auf Bestellung 129881 Stücke: Lieferzeit 21-28 Tag (e) |
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1N5282TR | Hersteller : onsemi / Fairchild | Diodes - General Purpose, Power, Switching Vr/80V Io/200mA T/R |
auf Bestellung 9547 Stücke: Lieferzeit 14-28 Tag (e) |
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1N5282TR | Hersteller : ONSEMI |
Description: ONSEMI - 1N5282TR - MISCELLANEOUS MOSFETS tariffCode: 85411000 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5282TR |
auf Bestellung 62500 Stücke: Lieferzeit 21-28 Tag (e) |
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1N5282TR | Hersteller : ON Semiconductor | Rectifier Diode Small Signal Switching 80V 0.2A 4ns 2-Pin DO-35 T/R |
Produkt ist nicht verfügbar |
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1N5282TR | Hersteller : ON Semiconductor | Diode Small Signal Switching 80V 0.2A 2-Pin DO-35 T/R |
Produkt ist nicht verfügbar |