1N5391GHA0G

1N5391GHA0G Taiwan Semiconductor Corporation


1N5391G%20SERIES_F2105.pdf Hersteller: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 50V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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Technische Details 1N5391GHA0G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 50V 1.5A DO204AC, Packaging: Tape & Box (TB), Package / Case: DO-204AC, DO-15, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-204AC (DO-15), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A, Current - Reverse Leakage @ Vr: 5 µA @ 50 V, Grade: Automotive, Qualification: AEC-Q101.