1N5397BULK EIC SEMICONDUCTOR INC.


1N5391%20-%201N5399.pdf Hersteller: EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 600V 1.5A DO41
Packaging: Bag
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 A @ 600 V
auf Bestellung 20000 Stücke:

Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
500+0.47 EUR
Mindestbestellmenge: 500
Produktrezensionen
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Technische Details 1N5397BULK EIC SEMICONDUCTOR INC.

Description: DIODE GEN PURP 600V 1.5A DO41, Packaging: Bag, Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 15pF @ 4V, 1MHz, Current - Average Rectified (Io): 1.5A, Supplier Device Package: DO-41, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A, Current - Reverse Leakage @ Vr: 5 A @ 600 V.