1N5401BULK EIC SEMICONDUCTOR INC.
Hersteller: EIC SEMICONDUCTOR INC.Description: DIODE GEN PURP 100V 3A DO201AD
Packaging: Bag
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 14647 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 500+ | 0.47 EUR |
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Technische Details 1N5401BULK EIC SEMICONDUCTOR INC.
Description: DIODE GEN PURP 100V 3A DO201AD, Packaging: Bag, Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 28pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.