1N5401G R0G Taiwan Semiconductor
auf Bestellung 2239 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 1.14 EUR |
| 55+ | 0.96 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.52 EUR |
| 1250+ | 0.42 EUR |
| 2500+ | 0.36 EUR |
| 10000+ | 0.33 EUR |
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Technische Details 1N5401G R0G Taiwan Semiconductor
Description: DIODE GEN PURP 100V 3A DO201AD, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 25pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Discontinued at Digi-Key, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V.
Weitere Produktangebote 1N5401G R0G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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1N5401G R0G | Hersteller : Taiwan Semiconductor |
 Diode 100V 3A 2-Pin DO-201AD |
Produkt ist nicht verfügbar |
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1N5401G R0G | Hersteller : Taiwan Semiconductor |
Diode Switching 100V 3A 2-Pin DO-201AD T/R |
Produkt ist nicht verfügbar |
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1N5401G R0G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 100V 3A DO201AD Packaging: Tape & Reel (TR) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Current - Reverse Leakage @ Vr: 5 µA @ 100 V |
Produkt ist nicht verfügbar |