1N5408GHA0G

1N5408GHA0G Taiwan Semiconductor


1n5400g20series_k2105.pdf Hersteller: Taiwan Semiconductor
Rectifier Diode 1KV 3A Automotive 2-Pin DO-201AD Ammo
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details 1N5408GHA0G Taiwan Semiconductor

Description: DIODE GEN PURP 3A DO201AD, Packaging: Tape & Box (TB), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 25pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 150°C, Grade: Automotive, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Qualification: AEC-Q101.

Weitere Produktangebote 1N5408GHA0G

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
1N5408GHA0G 1N5408GHA0G Hersteller : Taiwan Semiconductor 1n5400g20series_k2105.pdf Diode 1KV 3A Automotive 2-Pin DO-201AD T/R
Produkt ist nicht verfügbar
1N5408GHA0G 1N5408GHA0G Hersteller : Taiwan Semiconductor Corporation Description: DIODE GEN PURP 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
1N5408GHA0G 1N5408GHA0G Hersteller : Taiwan Semiconductor Rectifiers 3A, 1000V, Standard Recovery Rectifier
Produkt ist nicht verfügbar