1N5417TR Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes DivisionDescription: DIODE AVALANCHE 200V 3A SOD64
Packaging: Tape & Reel (TR)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 100 ns
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.99 EUR |
| 5000+ | 0.95 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details 1N5417TR Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 3A SOD64, Packaging: Tape & Reel (TR), Package / Case: SOD-64, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 100 ns, Technology: Avalanche, Current - Average Rectified (Io): 3A, Supplier Device Package: SOD-64, Operating Temperature - Junction: -55°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.
Weitere Produktangebote 1N5417TR nach Preis ab 1.01 EUR bis 2.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
1N5417TR | Hersteller : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVALANCHE 200V 3A SOD64 Packaging: Cut Tape (CT) Package / Case: SOD-64, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 100 ns Technology: Avalanche Current - Average Rectified (Io): 3A Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 10308 Stücke: Lieferzeit 21-28 Tag (e) |
|
||||||||||||||
 |
1N5417TR | Hersteller : Vishay Semiconductors |
Rectifiers 3.0 Amp 200 Volt |
auf Bestellung 9487 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||
 |
1N5417TR | Hersteller : Vishay |
Diode Switching 200V 3A 2-Pin SOD-64 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
1N5417/TR | Hersteller : Microchip Technology |
Diode Switching 200V 3A 2-Pin Case E T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
1N5417TR | Hersteller : Vishay |
Diode Switching 200V 3A 2-Pin SOD-64 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
1N5417/TR | Hersteller : Microchip Technology |
Diode Switching 200V 3A 2-Pin Case E T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
1N5417/TR | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 200V 3A B AXIAL Packaging: Tape & Reel (TR) Package / Case: Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
1N5417/TR | Hersteller : Microchip / Microsemi |
Rectifiers Rectifier |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
1N5417/TR | Hersteller : Microchip Technology |
Rectifiers 200 V UFR,FRR |
Produkt ist nicht verfügbar |