1N5420/TR

1N5420/TR Microchip Technology


lds-0231.pdf Hersteller: Microchip Technology
Diode Switching 600V 3A 2-Pin Case E Bag
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Technische Details 1N5420/TR Microchip Technology

Description: DIODE GENERAL PURPOSE TH, Packaging: Tape & Box (TB), Package / Case: R-4, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 400 ns, Technology: Standard, Capacitance @ Vr, F: 110pF @ 12V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: GPR-4AM, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA, Current - Reverse Leakage @ Vr: 1 µA @ 600 V.

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1N5420/TR 1N5420/TR Hersteller : Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 600V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
1N5420 TR Hersteller : Central Semiconductor Corp Description: DIODE GENERAL PURPOSE TH
Packaging: Tape & Box (TB)
Package / Case: R-4, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Capacitance @ Vr, F: 110pF @ 12V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: GPR-4AM
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
1N5420/TR 1N5420/TR Hersteller : Microchip Technology LDS_0231-1592557.pdf Rectifiers Rectifier
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