Technische Details 1N5557 Microchip Technology
Category: Unidirectional THT transil diodes, Description: Diode: TVS; 1.5kW; 54V; 19A; unidirectional; DO13, Mounting: THT, Case: DO13, Max. off-state voltage: 49V, Semiconductor structure: unidirectional, Max. forward impulse current: 19A, Breakdown voltage: 54V, Leakage current: 5µA, Type of diode: TVS, Peak pulse power dissipation: 1.5kW, Anzahl je Verpackung: 100 Stücke.
Weitere Produktangebote 1N5557
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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1N5557 | Hersteller : Microchip Technology |
 TVS Diode Single Uni-Dir 49V 1.5KW 2-Pin DO-13 Bag |
Produkt ist nicht verfügbar |
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| 1N5557 | Hersteller : Sensitron Semiconductors |
Diode TVS Single Uni-Dir 49V 1.5KW 2-Pin DO-13 |
Produkt ist nicht verfügbar |
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1N5557 | Hersteller : Microchip Technology |
Diode TVS Single Uni-Dir 49V 1.5KW 2-Pin DO-13 Bag |
Produkt ist nicht verfügbar |
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| 1N5557 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 54V; 19A; unidirectional; DO13 Mounting: THT Case: DO13 Max. off-state voltage: 49V Semiconductor structure: unidirectional Max. forward impulse current: 19A Breakdown voltage: 54V Leakage current: 5µA Type of diode: TVS Peak pulse power dissipation: 1.5kW Anzahl je Verpackung: 100 Stücke |
Produkt ist nicht verfügbar |
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| 1N5557 | Hersteller : MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 54V; 19A; unidirectional; DO13 Mounting: THT Case: DO13 Max. off-state voltage: 49V Semiconductor structure: unidirectional Max. forward impulse current: 19A Breakdown voltage: 54V Leakage current: 5µA Type of diode: TVS Peak pulse power dissipation: 1.5kW |
Produkt ist nicht verfügbar |