1N5614 Microchip Technology
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Description: DIODE GEN PURP 200V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
auf Bestellung 140 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 9.33 EUR |
100+ | 8.66 EUR |
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Technische Details 1N5614 Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL, Packaging: Bulk, Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 2 µs, Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 200°C, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A, Current - Reverse Leakage @ Vr: 500 nA @ 200 V.
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Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us Type of diode: rectifying Max. off-state voltage: 200V Max. forward impulse current: 30A Semiconductor structure: single diode Mounting: THT Kind of package: tape Load current: 1A Reverse recovery time: 2µs Max. forward voltage: 1.3V |
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