1N5804/TR Microchip Technology
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Technische Details 1N5804/TR Microchip Technology
Description: DIODE GEN PURP 100V 1A, Packaging: Tape & Reel (TR), Package / Case: A, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 25 ns, Technology: Standard, Capacitance @ Vr, F: 25pF @ 10V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: A, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 100 V.
Weitere Produktangebote 1N5804/TR
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1N5804/TR | Hersteller : Microchip Technology |
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1N5804/TR | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 100V 1A Packaging: Tape & Reel (TR) Package / Case: A, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Standard Capacitance @ Vr, F: 25pF @ 10V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 100 V |
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1N5804/TR | Hersteller : Microchip Technology |
Rectifiers 100V 1A UFR,FRR THT TR |
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