1N5811E3/TR

1N5811E3/TR Microchip Technology


lds-0168.pdf Hersteller: Microchip Technology
Rectifier Diode Switching 150V 6A 30ns T/R
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Technische Details 1N5811E3/TR Microchip Technology

Description: DIODE GEN PURP 150V 3A B AXIAL, Packaging: Tape & Reel (TR), Package / Case: B, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 30 ns, Technology: Standard, Capacitance @ Vr, F: 60pF @ 10V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: B, Axial, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 150 V, Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A, Current - Reverse Leakage @ Vr: 5 µA @ 150 V.

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1N5811E3/TR 1N5811E3/TR Hersteller : Microchip Technology 123509-lds-0168-datasheet Description: DIODE GEN PURP 150V 3A B AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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1N5811E3/TR 1N5811E3/TR Hersteller : Microchip Technology LDS_0168-1592578.pdf Rectifiers Rectifier
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