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1N5814R

1N5814R Solid State Inc.

1N5802-ssi.pdf Hersteller: Solid State Inc.
Description: DIODE GEN PURP 100V 20A DO4
Packaging: Box
Package / Case: DO-203AA, DO-4, Stud
Mounting Type: Stud Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 20A
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+15.41 EUR
Mindestbestellmenge: 10
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Technische Details 1N5814R Solid State Inc.

Description: DIODE GEN PURP 100V 20A DO4, Packaging: Box, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 35 ns, Technology: Standard, Reverse Polarity, Current - Average Rectified (Io): 20A, Supplier Device Package: DO-4, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A, Current - Reverse Leakage @ Vr: 10 µA @ 100 V.

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