1N5822 A0G Taiwan Semiconductor
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Technische Details 1N5822 A0G Taiwan Semiconductor
Description: DIODE SCHOTTKY 40V 3A DO201AD, Packaging: Tape & Box (TB), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Capacitance @ Vr, F: 200pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 125°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 40 V, Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A, Current - Reverse Leakage @ Vr: 500 µA @ 40 V.
Weitere Produktangebote 1N5822 A0G
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1N5822 A0G | Hersteller : Taiwan Semiconductor Corporation |
Description: DIODE SCHOTTKY 40V 3A DO201AD Packaging: Tape & Box (TB) Package / Case: DO-201AD, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 200pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 525 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V |
Produkt ist nicht verfügbar |
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1N5822 A0G | Hersteller : Taiwan Semiconductor | Schottky Diodes & Rectifiers 3A, 40V, Schottky Rectifier |
Produkt ist nicht verfügbar |