Technische Details 1N5830R GeneSiC Semiconductor
Description: DIODE SCHOTTKY REV 25V 25A DO4, Packaging: Bulk, Package / Case: DO-203AA, DO-4, Stud, Mounting Type: Chassis, Stud Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Technology: Schottky, Reverse Polarity, Current - Average Rectified (Io): 25A, Supplier Device Package: DO-4, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 25 V, Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A, Current - Reverse Leakage @ Vr: 2 mA @ 20 V.
Weitere Produktangebote 1N5830R
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 1N5830R | Hersteller : GeneSiC Semiconductor |
 Description: DIODE SCHOTTKY REV 25V 25A DO4Packaging: Bulk Package / Case: DO-203AA, DO-4, Stud Mounting Type: Chassis, Stud Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky, Reverse Polarity Current - Average Rectified (Io): 25A Supplier Device Package: DO-4 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 25 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 25 A Current - Reverse Leakage @ Vr: 2 mA @ 20 V |
Produkt ist nicht verfügbar |
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1N5830R | Hersteller : GeneSiC Semiconductor |
Schottky Diodes & Rectifiers 25V - 25A Schottky Rectifier |
Produkt ist nicht verfügbar |