1N645-1E3/TR Microchip Technology


Hersteller: Microchip Technology
Hermetically Sealed Silicon Rectifier
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Technische Details 1N645-1E3/TR Microchip Technology

Description: DIODE GEN PURP 225V 400MA DO35, Packaging: Tape & Reel (TR), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 400mA, Supplier Device Package: DO-35 (DO-204AH), Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 225 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA, Current - Reverse Leakage @ Vr: 50 nA @ 225 V.

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1N645-1e3/TR 1N645-1e3/TR Hersteller : Microchip Technology Description: DIODE GEN PURP 225V 400MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400mA
Supplier Device Package: DO-35 (DO-204AH)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 225 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 225 V
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1N645-1e3/TR 1N645-1e3/TR Hersteller : Microchip Technology Rectifiers 225 V Signal or Computer Diode
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