1N649-1/TR Microchip Technology
Hersteller: Microchip TechnologyDescription: DIODE GEN PURP 600V 400MA DO35
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 400mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA
Current - Reverse Leakage @ Vr: 50 nA @ 600 V
auf Bestellung 355 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 355+ | 5.55 EUR |
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Technische Details 1N649-1/TR Microchip Technology
Description: DIODE GEN PURP 600V 400MA DO35, Packaging: Tape & Reel (TR), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 400mA, Supplier Device Package: DO-35, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA, Current - Reverse Leakage @ Vr: 50 nA @ 600 V.
Weitere Produktangebote 1N649-1/TR nach Preis ab 5.55 EUR bis 6.08 EUR
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1N649-1/TR | Hersteller : Microchip Technology |
Description: DIODE GEN PURP 600V 400MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 400mA Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 400 mA Current - Reverse Leakage @ Vr: 50 nA @ 600 V |
auf Bestellung 610 Stücke: Lieferzeit 21-28 Tag (e) |
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1N649-1/TR | Hersteller : Microchip Technology |
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