Produkte > MICROSEMI CORPORATION > 1N821A, SEL. 1% VBR
1N821A, SEL. 1% VBR

1N821A, SEL. 1% VBR Microsemi Corporation

1N821_1N829A-1_DO-35.pdf Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.2V 500MW DO35
Tolerance: ±1%
Packaging: Bag
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
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Technische Details 1N821A, SEL. 1% VBR Microsemi Corporation

Description: DIODE ZENER 6.2V 500MW DO35, Tolerance: ±1%, Packaging: Bag, Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Operating Temperature: -65°C ~ 175°C, Voltage - Zener (Nom) (Vz): 6.2 V, Impedance (Max) (Zzt): 10 Ohms, Supplier Device Package: DO-35 (DO-204AH), Power - Max: 500 mW, Current - Reverse Leakage @ Vr: 2 µA @ 3 V.