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1N914B A0G

1N914B A0G Taiwan Semiconductor

Hersteller: Taiwan Semiconductor
Diodes - General Purpose, Power, Switching 100V, 0.15A, Switching Diode & Array
auf Bestellung 17785 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
135+0.39 EUR
146+ 0.36 EUR
274+ 0.19 EUR
1000+ 0.083 EUR
5000+ 0.068 EUR
10000+ 0.052 EUR
25000+ 0.049 EUR
Mindestbestellmenge: 135
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Technische Details 1N914B A0G Taiwan Semiconductor

Description: DIODE GEN PURP 100V 150MA DO35, Packaging: Tape & Box (TB), Package / Case: DO-204AH, DO-35, Axial, Mounting Type: Through Hole, Speed: Small Signal =< 200mA (Io), Any Speed, Reverse Recovery Time (trr): 4 ns, Technology: Standard, Capacitance @ Vr, F: 4pF @ 0V, 1MHz, Current - Average Rectified (Io): 150mA, Supplier Device Package: DO-35, Operating Temperature - Junction: -65°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 100 V, Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA, Current - Reverse Leakage @ Vr: 5 µA @ 75 V.

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1N914B A0G 1N914B A0G Hersteller : Taiwan Semiconductor 1n414820series_k2301.pdf Rectifier Diode Small Signal Switching 100V 0.15A 4ns 2-Pin DO-35 Ammo
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1N914B A0G 1N914B A0G Hersteller : Taiwan Semiconductor Corporation Description: DIODE GEN PURP 100V 150MA DO35
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar