1N916B/T50R

1N916B/T50R

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Technische Details 1N916B/T50R

Description: DIODE GEN PURP 100V 200MA DO35, Packaging: Tape & Reel (TR), Current - Reverse Leakage @ Vr: 5 µA @ 75 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 mA, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Obsolete, Operating Temperature - Junction: -65°C ~ 175°C, Supplier Device Package: DO-35, Current - Average Rectified (Io): 200mA, Capacitance @ Vr, F: 2pF @ 0V, 1MHz, Reverse Recovery Time (trr): 4 ns, Speed: Small Signal =< 200mA (Io), Any Speed, Diode Type: Standard, Mounting Type: Through Hole, Package / Case: DO-204AH, DO-35, Axial.

Preis 1N916B/T50R ab 0 EUR bis 0 EUR

1N916B_T50R
1N916B_T50R
Hersteller: onsemi
Description: DIODE GEN PURP 100V 200MA DO35
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 20 mA
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-35
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Diode Type: Standard
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
ONSM-S-A0003539415-1.pdf?t.download=true&u=5oefqw
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