1MBI200U4H-120L-50 FUJI
Hersteller: FUJICategory: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 62MM
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper
Max. off-state voltage: 1.2kV
Collector current: 200A
Case: 62MM
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 400A
Mechanical mounting: screw
Anzahl je Verpackung: 3 Stücke
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Technische Details 1MBI200U4H-120L-50 FUJI
Category: IGBT modules, Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 62MM, Type of module: IGBT, Semiconductor structure: diode/transistor, Topology: boost chopper, Max. off-state voltage: 1.2kV, Collector current: 200A, Case: 62MM, Electrical mounting: FASTON connectors; screw, Gate-emitter voltage: ±20V, Pulsed collector current: 400A, Mechanical mounting: screw, Anzahl je Verpackung: 3 Stücke.
Weitere Produktangebote 1MBI200U4H-120L-50
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 1MBI200U4H-120L-50 | Hersteller : FUJI |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; 62MM Type of module: IGBT Semiconductor structure: diode/transistor Topology: boost chopper Max. off-state voltage: 1.2kV Collector current: 200A Case: 62MM Electrical mounting: FASTON connectors; screw Gate-emitter voltage: ±20V Pulsed collector current: 400A Mechanical mounting: screw |
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