1N6482-E3/96 Vishay General Semiconductor - Diodes Division
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Tape & Reel (TR)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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Technische Details 1N6482-E3/96 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB, Packaging: Tape & Reel (TR), Package / Case: DO-213AB, MELF (Glass), Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Capacitance @ Vr, F: 8pF @ 4V, 1MHz, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-213AB, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote 1N6482-E3/96 nach Preis ab 0.18 EUR bis 2.59 EUR
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1N6482-E3/96 | Vishay General Semiconductor |
Rectifiers 1.0 Amp 600 Volt |
auf Bestellung 1650 Stücke: Lieferzeit 10-14 Tag (e) |
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1N6482-E3/96 | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 1A DO213AB Packaging: Cut Tape (CT) Package / Case: DO-213AB, MELF (Glass) Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 8pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 6990 Stücke: Lieferzeit 10-14 Tag (e) |
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1N6482-E3/96 | Vishay Semiconductors |
Rectifiers 1.0 Amp 600 Volt |
auf Bestellung 11167 Stücke: Lieferzeit 10-14 Tag (e) |
|
| 1N6482-E3/96 |
|
Hersteller: Vishay General Semiconductor
Rectifiers 1.0 Amp 600 Volt
Rectifiers 1.0 Amp 600 Volt
auf Bestellung 1650 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.65 EUR |
| 10+ | 0.46 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.18 EUR |
| 1N6482-E3/96 |
|
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO213AB
Packaging: Cut Tape (CT)
Package / Case: DO-213AB, MELF (Glass)
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 6990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.86 EUR |
| 32+ | 0.67 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.37 EUR |
| 1N6482-E3/96 |
|
Hersteller: Vishay Semiconductors
Rectifiers 1.0 Amp 600 Volt
Rectifiers 1.0 Amp 600 Volt
auf Bestellung 11167 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.59 EUR |
| 10+ | 1.63 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.73 EUR |
| 1500+ | 0.67 EUR |