Technische Details 20ETF08S Vishay
Description: DIODE GEN PURP 800V 20A TO263AB, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 400 ns, Technology: Standard, Current - Average Rectified (Io): 20A, Supplier Device Package: TO-263AB (D²PAK), Operating Temperature - Junction: -40°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 800 V, Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A, Current - Reverse Leakage @ Vr: 100 µA @ 800 V.
Weitere Produktangebote 20ETF08S
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 20ETF08S | Hersteller : Vishay General Semiconductor - Diodes Division |
 Description: DIODE GEN PURP 800V 20A TO263ABPackaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Technology: Standard Current - Average Rectified (Io): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 800 V |
Produkt ist nicht verfügbar |
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20ETF08S | Hersteller : Vishay Semiconductors |
Rectifiers RECOMMENDED ALT 78-VS-20ETF08S-M3 |
Produkt ist nicht verfügbar |