20KPA192CA MDE Semiconductor Inc
Hersteller: MDE Semiconductor IncDescription: TVS DIODE UP 192VRWM 309VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 65.4A
Voltage - Reverse Standoff (Typ): 192V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 214.5V
Voltage - Clamping (Max) @ Ipp: 309V
Power - Peak Pulse: 20000W (20kW)
Power Line Protection: No
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 18.62 EUR |
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Technische Details 20KPA192CA MDE Semiconductor Inc
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 225.2V; 65.4A; bidirectional; ±5%; P600; 20kW; reel,tape, Kind of package: reel; tape, Max. off-state voltage: 192V, Semiconductor structure: bidirectional, Max. forward impulse current: 65.4A, Breakdown voltage: 225.2V, Leakage current: 2µA, Type of diode: TVS, Tolerance: ±5%, Case: P600, Features of semiconductor devices: glass passivated, Mounting: THT, Peak pulse power dissipation: 20kW, Anzahl je Verpackung: 800 Stücke.
Weitere Produktangebote 20KPA192CA
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|---|---|---|---|---|---|
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20KPA192CA | Hersteller : Littelfuse |
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20KPA192CA | Hersteller : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 225.2V; 65.4A; bidirectional; ±5%; P600; 20kW; reel,tape Kind of package: reel; tape Max. off-state voltage: 192V Semiconductor structure: bidirectional Max. forward impulse current: 65.4A Breakdown voltage: 225.2V Leakage current: 2µA Type of diode: TVS Tolerance: ±5% Case: P600 Features of semiconductor devices: glass passivated Mounting: THT Peak pulse power dissipation: 20kW Anzahl je Verpackung: 800 Stücke |
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20KPA192CA | Hersteller : Littelfuse |
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20KPA192CA | Hersteller : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 225.2V; 65.4A; bidirectional; ±5%; P600; 20kW; reel,tape Kind of package: reel; tape Max. off-state voltage: 192V Semiconductor structure: bidirectional Max. forward impulse current: 65.4A Breakdown voltage: 225.2V Leakage current: 2µA Type of diode: TVS Tolerance: ±5% Case: P600 Features of semiconductor devices: glass passivated Mounting: THT Peak pulse power dissipation: 20kW |
Produkt ist nicht verfügbar |