20KPA26CA MDE Semiconductor Inc
Hersteller: MDE Semiconductor IncDescription: TVS DIODE UP 26VRWM 44.7VC
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 451.9A
Voltage - Reverse Standoff (Typ): 26V
Supplier Device Package: P600
Bidirectional Channels: 1
Voltage - Breakdown (Min): 29.04V
Voltage - Clamping (Max) @ Ipp: 44.7V
Power - Peak Pulse: 20000W (20kW)
Power Line Protection: No
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 100+ | 28.36 EUR |
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Technische Details 20KPA26CA MDE Semiconductor Inc
Description: TVS DIODE 26VWM 44.7VC P600, Packaging: Tape & Reel (TR), Package / Case: P600, Axial, Mounting Type: Through Hole, Type: Zener, Operating Temperature: -55°C ~ 175°C (TJ), Applications: General Purpose, Current - Peak Pulse (10/1000µs): 451.9A, Voltage - Reverse Standoff (Typ): 26V, Supplier Device Package: P600, Bidirectional Channels: 1, Voltage - Breakdown (Min): 29.04V, Voltage - Clamping (Max) @ Ipp: 44.7V, Power - Peak Pulse: 20000W (20kW), Power Line Protection: No, Part Status: Active.
Weitere Produktangebote 20KPA26CA nach Preis ab 31.64 EUR bis 41.52 EUR
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auf Bestellung 416 Stücke: Lieferzeit 21-28 Tag (e) |
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Category: Bidirectional THT transil diodes Description: Diode: TVS; 30.5V; 451.9A; bidirectional; ±5%; P600; 20kW; reel,tape Type of diode: TVS Max. off-state voltage: 26V Breakdown voltage: 30.5V Max. forward impulse current: 451.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 4mA Peak pulse power dissipation: 20kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Anzahl je Verpackung: 800 Stücke |
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Category: Bidirectional THT transil diodes Description: Diode: TVS; 30.5V; 451.9A; bidirectional; ±5%; P600; 20kW; reel,tape Type of diode: TVS Max. off-state voltage: 26V Breakdown voltage: 30.5V Max. forward impulse current: 451.9A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 4mA Peak pulse power dissipation: 20kW Kind of package: reel; tape Features of semiconductor devices: glass passivated |
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