2N1711S

2N1711S Microchip Technology


2N1711-1593190.pdf Hersteller: Microchip Technology
Bipolar Transistors - BJT Power BJT
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Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
1+57.75 EUR
100+ 53.64 EUR
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Technische Details 2N1711S Microchip Technology

Description: NPN TRANSISTOR, Packaging: Bulk, Package / Case: TO-205AD, TO-39-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA, Current - Collector Cutoff (Max): 10nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V, Supplier Device Package: TO-39, Part Status: Active, Current - Collector (Ic) (Max): 500 mA, Voltage - Collector Emitter Breakdown (Max): 30 V, Power - Max: 800 mW.

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2N1711S Hersteller : MOT 6017-2n1711-datasheet CAN
auf Bestellung 918 Stücke:
Lieferzeit 21-28 Tag (e)
2N1711S 2N1711S Hersteller : Microchip Technology 6017-2n1711-datasheet Description: NPN TRANSISTOR
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
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