Technische Details 2N3439L Microsemi
Description: TRANS NPN 350V 1A TO5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Operating Temperature: -65°C ~ 200°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA, Current - Collector Cutoff (Max): 2µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V, Supplier Device Package: TO-5, Part Status: Discontinued at Digi-Key, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 350 V, Power - Max: 800 mW.
Weitere Produktangebote 2N3439L
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| 2N3439L | Hersteller : N/A |
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auf Bestellung 28000 Stücke: Lieferzeit 21-28 Tag (e) |
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2N3439L | Hersteller : Microchip Technology |
Trans GP BJT NPN 350V 1A 800mW 3-Pin TO-5 Bag |
Produkt ist nicht verfügbar |
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2N3439L | Hersteller : Microchip Technology |
Trans GP BJT NPN 350V 1A 800mW 3-Pin TO-5 Bag |
Produkt ist nicht verfügbar |
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2N3439L | Hersteller : Microchip Technology |
Description: TRANS NPN 350V 1A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Current - Collector Cutoff (Max): 2µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Supplier Device Package: TO-5 Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 350 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |