Technische Details 2N4001 MOT
Description: TRANS 100V 1A TO5, Packaging: Bulk, Package / Case: TO-205AA, TO-5-3 Metal Can, Mounting Type: Through Hole, Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A, Current - Collector Cutoff (Max): 2µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 2V, Frequency - Transition: 40MHz, Supplier Device Package: TO-5, Part Status: Active, Current - Collector (Ic) (Max): 1 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 15 W.
Weitere Produktangebote 2N4001
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| 2N4001 | Hersteller : MOTOROLA |
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auf Bestellung 5500 Stücke: Lieferzeit 21-28 Tag (e) |
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2N4001 | Hersteller : Microchip Technology |
Trans GP BJT NPN 100V 1A 3-Pin TO-5 |
Produkt ist nicht verfügbar |
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| 2N4001 | Hersteller : General Semiconductor |
Description: TRANS 100V 1A TO5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 2µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 2V Frequency - Transition: 40MHz Supplier Device Package: TO-5 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 15 W |
Produkt ist nicht verfügbar |
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2N4001 | Hersteller : Microchip Technology |
Description: POWER BJT Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100µA, 500µA Supplier Device Package: TO-5AA Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W |
Produkt ist nicht verfügbar |
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| 2N4001 | Hersteller : Microchip Technology |
Bipolar Transistors - BJT Power BJT |
Produkt ist nicht verfügbar |