Technische Details 2N5179 Microchip Technology
Description: RF TRANS NPN 12V 200MHZ TO72, Packaging: Bulk, Package / Case: TO-206AF, TO-72-4 Metal Can, Mounting Type: Through Hole, Transistor Type: NPN, Gain: 20dB, Power - Max: 300mW, Current - Collector (Ic) (Max): 50mA, Voltage - Collector Emitter Breakdown (Max): 12V, DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V, Frequency - Transition: 200MHz, Noise Figure (dB Typ @ f): 4.5dB @ 200MHz, Supplier Device Package: TO-72, Part Status: Obsolete.
Weitere Produktangebote 2N5179
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| 2N5179 | Hersteller : MICROSEMI |
 TO72/RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS 2N5179Anzahl je Verpackung: 1000 Stücke |
Produkt ist nicht verfügbar |
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| 2N5179 | Hersteller : Microsemi Corporation |
Description: RF TRANS NPN 12V 200MHZ TO72 Packaging: Bulk Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Transistor Type: NPN Gain: 20dB Power - Max: 300mW Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 12V DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 3mA, 1V Frequency - Transition: 200MHz Noise Figure (dB Typ @ f): 4.5dB @ 200MHz Supplier Device Package: TO-72 Part Status: Obsolete |
Produkt ist nicht verfügbar |
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| 2N5179 | Hersteller : Microchip Technology |
RF Bipolar Transistors Bipolar/LDMOS Transistor |
Produkt ist nicht verfügbar |
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| 2N5179 | Hersteller : Infineon Technologies |
Bipolar Transistors - BJT |
Produkt ist nicht verfügbar |