2N5401BU
Hersteller: 2N5401BU Диоды
auf Bestellung 10 Stücke:
Lieferzeit 7-21 Tag (e)
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Technische Details 2N5401BU
Description: BJT TO92 150V PNP 0.625W 150C, Packaging: Bulk, Package / Case: TO-226-3, TO-92-3 (TO-226AA), Mounting Type: Through Hole, Transistor Type: PNP, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V, Frequency - Transition: 400MHz, Supplier Device Package: TO-92-3, Part Status: Obsolete, Current - Collector (Ic) (Max): 600 mA, Voltage - Collector Emitter Breakdown (Max): 150 V, Power - Max: 625 mW.
Weitere Produktangebote 2N5401BU
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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2N5401BU | Hersteller : ON Semiconductor |
Trans GP BJT PNP 150V 0.6A 3-Pin TO-92 Bulk |
Produkt ist nicht verfügbar |
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2N5401BU | Hersteller : onsemi |
Description: BJT TO92 150V PNP 0.625W 150C Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 400MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |